STMicroelectronics, Inc. Single FETs, MOSFETs STW30NM60D

Description
N-Channel 600V 30A (Tc) 312W (Tc) Through Hole TO-247-3
Request a Quote Datasheet
Description
N-Channel 600V 30A (Tc) 312W (Tc) Through Hole TO-247-3
Request a Quote Datasheet

Suppliers

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Product
Description
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Single FETs, MOSFETs - 497-4426-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-4426-5-ND
Single FETs, MOSFETs 497-4426-5-ND
N-Channel 600V 30A (Tc) 312W (Tc) Through Hole TO-247-3

N-Channel 600V 30A (Tc) 312W (Tc) Through Hole TO-247-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1278017-STW30NM60D - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1278017-STW30NM60D
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1278017-STW30NM60D
Win Source Part Number: 1278017-STW30NM60D Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: MDmesh™ Package: Tube Standard Package: 30 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 145mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 312W (Tc) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3 Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2520 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 74 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: STMicroelectronics Other Names: 497-4426-5 Base Product Number: STW30N Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1278017-STW30NM60D
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: MDmesh™
Package: Tube
Standard Package: 30
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 312W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2520 pF @ 25 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 74 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: 497-4426-5
Base Product Number: STW30N
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STW30NM60D - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STW30NM60D
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STW30NM60D
MOSFET N-CH 600V 30A TO247-3

MOSFET N-CH 600V 30A TO247-3

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors RF Transistors
Product Number 497-4426-5-ND 1278017-STW30NM60D STW30NM60D
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
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