STMicroelectronics, Inc. Single FETs, MOSFETs STW30N65M5

Description
N-Channel 650V 22A (Tc) 140W (Tc) Through Hole TO-247-3
Request a Quote Datasheet
Description
N-Channel 650V 22A (Tc) 140W (Tc) Through Hole TO-247-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 497-10655-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-10655-5-ND
Single FETs, MOSFETs 497-10655-5-ND
N-Channel 650V 22A (Tc) 140W (Tc) Through Hole TO-247-3

N-Channel 650V 22A (Tc) 140W (Tc) Through Hole TO-247-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW30N65M5 - 1004916-STW30N65M5 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW30N65M5
1004916-STW30N65M5
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW30N65M5 1004916-STW30N65M5
Manufacturer: STMicroelectronics Win Source Part Number: 1004916-STW30N65M5 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 140W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-247-3 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 22A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 64nC @ 10V Max Input Capacitance: 2880pF @ 100V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 139 mOhm @ 11A, 10V Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 1004916-STW30N65M5
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 140W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-247-3
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 22A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 64nC @ 10V
Max Input Capacitance: 2880pF @ 100V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 139 mOhm @ 11A, 10V
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
MOSFETs - 7610317P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
7610317P
MOSFETs 7610317P
MOSFET N-Channel 650V 22A TO247

MOSFET N-Channel 650V 22A TO247

Supplier's Site
MOSFETs - 7610317 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
7610317
MOSFETs 7610317
MOSFET N-Channel 650V 22A TO247

MOSFET N-Channel 650V 22A TO247

Supplier's Site
MOSFETs - 1687532 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1687532
MOSFETs 1687532
MOSFET N-Channel 650V 22A TO247

MOSFET N-Channel 650V 22A TO247

Supplier's Site
Sheung Wan, Hong Kong
MOSFET POWER MOSFET N-CH 650V 22 A

MOSFET POWER MOSFET N-CH 650V 22 A

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STW30N65M5 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STW30N65M5
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STW30N65M5
MOSFET N-CH 650V 22A TO247-3

MOSFET N-CH 650V 22A TO247-3

Supplier's Site
Mosfet, N-Ch, 650V, 22A, To-247; Channel Type Stmicroelectronics - 45AC7785 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 650V, 22A, To-247; Channel Type Stmicroelectronics
45AC7785
Mosfet, N-Ch, 650V, 22A, To-247; Channel Type Stmicroelectronics 45AC7785
MOSFET, N-CH, 650V, 22A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:22A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

MOSFET, N-CH, 650V, 22A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:22A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics RS Components, Ltd. RS Components, Ltd. VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 497-10655-5-ND 1004916-STW30N65M5 7610317P 7610317 STW30N65M5 STW30N65M5 45AC7785
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW30N65M5 MOSFETs MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 650V, 22A, To-247; Channel Type Stmicroelectronics
Polarity N-Channel N-Channel; N-Channel N-Channel N-Channel
Package Type TO-247; TO-247-3 TO-247; SOT3; TO-247-3 TO-247; TO-247 TO-247; To-247 TO-247; TO-247-3 TO-3; TO-247
V(BR)DSS 650 volts
PD 140000 milliwatts
TJ 150 C (302 F)
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