STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW30N65M5 STW30N65M5

Description
Manufacturer: STMicroelectronics Win Source Part Number: 1004916-STW30N65M5 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 140W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-247-3 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 22A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 64nC @ 10V Max Input Capacitance: 2880pF @ 100V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 139 mOhm @ 11A, 10V Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW30N65M5 - 1004916-STW30N65M5 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - 497-10655-5-ND - DigiKey
    DigiKey
  • MOSFETs - 7610317P - RS Components, Ltd.
    RS Components, Ltd.
  • MOSFETs - 7610317 - RS Components, Ltd.
    RS Components, Ltd.
  • MOSFETs - 1687532 - RS Components, Ltd.
    RS Components, Ltd.
  • Mosfet, N-Ch, 650V, 22A, To-247; Channel Type Stmicroelectronics - 45AC7785 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STW30N65M5 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: STMicroelectronics Win Source Part Number: 1004916-STW30N65M5 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 140W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-247-3 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 22A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 64nC @ 10V Max Input Capacitance: 2880pF @ 100V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 139 mOhm @ 11A, 10V Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW30N65M5 - 1004916-STW30N65M5 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW30N65M5
1004916-STW30N65M5
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW30N65M5 1004916-STW30N65M5
Manufacturer: STMicroelectronics Win Source Part Number: 1004916-STW30N65M5 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 140W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-247-3 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 22A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 64nC @ 10V Max Input Capacitance: 2880pF @ 100V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 139 mOhm @ 11A, 10V Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 1004916-STW30N65M5
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 140W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-247-3
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 22A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 64nC @ 10V
Max Input Capacitance: 2880pF @ 100V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 139 mOhm @ 11A, 10V
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - 497-10655-5-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-10655-5-ND
Single FETs, MOSFETs 497-10655-5-ND
N-Channel 650V 22A (Tc) 140W (Tc) Through Hole TO-247-3

N-Channel 650V 22A (Tc) 140W (Tc) Through Hole TO-247-3

Buy Now Datasheet
MOSFETs - 7610317P - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
7610317P
MOSFETs 7610317P
MOSFET N-Channel 650V 22A TO247

MOSFET N-Channel 650V 22A TO247

Supplier's Site
MOSFETs - 7610317 - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
7610317
MOSFETs 7610317
MOSFET N-Channel 650V 22A TO247

MOSFET N-Channel 650V 22A TO247

Supplier's Site
MOSFETs - 1687532 - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1687532
MOSFETs 1687532
MOSFET N-Channel 650V 22A TO247

MOSFET N-Channel 650V 22A TO247

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
STW30N65M5
MOSFET STW30N65M5
MOSFET POWER MOSFET N-CH 650V 22 A

MOSFET POWER MOSFET N-CH 650V 22 A

Buy Now Datasheet
Mosfet, N-Ch, 650V, 22A, To-247; Channel Type Stmicroelectronics - 45AC7785 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 650V, 22A, To-247; Channel Type Stmicroelectronics
45AC7785
Mosfet, N-Ch, 650V, 22A, To-247; Channel Type Stmicroelectronics 45AC7785
MOSFET, N-CH, 650V, 22A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:22A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

MOSFET, N-CH, 650V, 22A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:22A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STW30N65M5 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STW30N65M5
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STW30N65M5
MOSFET N-CH 650V 22A TO247-3

MOSFET N-CH 650V 22A TO247-3

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey RS Components, Ltd. RS Components, Ltd. VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1004916-STW30N65M5 497-10655-5-ND 7610317P 7610317 STW30N65M5 45AC7785 STW30N65M5
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW30N65M5 Single FETs, MOSFETs MOSFETs MOSFETs MOSFET Mosfet, N-Ch, 650V, 22A, To-247; Channel Type Stmicroelectronics Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel
V(BR)DSS 650 volts
PD 140000 milliwatts
TJ 150 C (302 F)
Package Type TO-247; SOT3; TO-247-3 TO-247; TO-247-3 TO-247; TO-247 TO-247; To-247 TO-3; TO-247 TO-247; TO-247-3
Unlock Full Specs
to access all available technical data