650V 22A N-CH MOSFET TO-247 Product overview: STW30N65M5 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 22A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 22A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STW30N65M5 can be used for catalog matching and distributor lookup.
Manufacturer: STMicroelectronics
Win Source Part Number: 1004916-STW30N65M5
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 140W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-247-3
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 22A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 64nC @ 10V
Max Input Capacitance: 2880pF @ 100V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 139 mOhm @ 11A, 10V
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance
N-Channel 650V 22A (Tc) 140W (Tc) Through Hole TO-247-3
MOSFET POWER MOSFET N-CH 650V 22 A
MOSFET, N-CH, 650V, 22A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:22A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
MOSFET N-CH 650V 22A TO247-3
| RS Components, Ltd. | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 7610317P | 7610317 | 278-STW30N65M5 | 1004916-STW30N65M5 | 497-10655-5-ND | STW30N65M5 | 45AC7785 | STW30N65M5 |
| Product Name | MOSFETs | MOSFETs | 650V 22A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW30N65M5 | Single FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 650V, 22A, To-247; Channel Type Stmicroelectronics | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||
| Package Type | TO-247; TO-247 | TO-247; To-247 | TO-247; SOT3; TO-247-3 | TO-247; TO-247-3 | TO-3; TO-247 | TO-247; TO-247-3 | ||
| MOSFET Operating Mode | Enhancement | |||||||
| Number of units in IC | 1 | |||||||
| PD | 140000 milliwatts | 140000 milliwatts |
