STMicroelectronics, Inc. Single FETs, MOSFETs STW28N65M2

Description
N-Channel 650V 20A (Tc) 170W (Tc) Through Hole TO-247-3
Request a Quote Datasheet
Description
N-Channel 650V 20A (Tc) 170W (Tc) Through Hole TO-247-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 497-15575-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-15575-5-ND
Single FETs, MOSFETs 497-15575-5-ND
N-Channel 650V 20A (Tc) 170W (Tc) Through Hole TO-247-3

N-Channel 650V 20A (Tc) 170W (Tc) Through Hole TO-247-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1222520-STW28N65M2 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1222520-STW28N65M2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1222520-STW28N65M2
Win Source Part Number: 1222520-STW28N65M2 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: MDmesh™ M2 Package: Tube Standard Package: 30 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 170W (Tc) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3 Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 100 V Vgs (Max): ±25V Temperature Range - Operating: 150°C (TJ) Alternative Parts (Cross-Reference): STW28N65M2.; ECCN: EAR99 Fake Threat In the Open Market: 64 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: STMicroelectronics Other Names: 497-15575-5 Base Product Number: STW28 Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1222520-STW28N65M2
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: MDmesh™ M2
Package: Tube
Standard Package: 30
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 170W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 100 V
Vgs (Max): ±25V
Temperature Range - Operating: 150°C (TJ)
Alternative Parts (Cross-Reference): STW28N65M2.;
ECCN: EAR99
Fake Threat In the Open Market: 64 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: 497-15575-5
Base Product Number: STW28
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Single FETs, MOSFETs - STW28N65M2 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STW28N65M2
Single FETs, MOSFETs STW28N65M2
MOSFET N-CH 650V 20A TO247

MOSFET N-CH 650V 20A TO247

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STW28N65M2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STW28N65M2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STW28N65M2
MOSFET N-CH 650V 20A TO247

MOSFET N-CH 650V 20A TO247

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-channel 650 V, 0.15 Ohm typ., 20 A MDmesh M2 Power MOSFET in TO-247 package

MOSFET N-channel 650 V, 0.15 Ohm typ., 20 A MDmesh M2 Power MOSFET in TO-247 package

Buy Now Datasheet
Mosfet, N-Ch, 650V, 20A, 170W, To-247; Transistor Polarity Stmicroelectronics - 07AH7136 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 650V, 20A, 170W, To-247; Transistor Polarity Stmicroelectronics
07AH7136
Mosfet, N-Ch, 650V, 20A, 170W, To-247; Transistor Polarity Stmicroelectronics 07AH7136
MOSFET, N-CH, 650V, 20A, 170W, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.15ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes

MOSFET, N-CH, 650V, 20A, 170W, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.15ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 497-15575-5-ND 1222520-STW28N65M2 STW28N65M2 STW28N65M2 STW28N65M2 07AH7136
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Mosfet, N-Ch, 650V, 20A, 170W, To-247; Transistor Polarity Stmicroelectronics
Polarity N-Channel N-Channel N-Channel; N-Channel
Package Type TO-247; TO-247-3 TO-247; SOT3 TO-247; TO-247-3 TO-247; TO-247-3 TO-3; TO-247
PD 170000 milliwatts 170000 milliwatts
TJ 150 C (302 F) 150 C (302 F)
Transistor Technology / Material MOSFET (Metal Oxide)
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