STMicroelectronics, Inc. FETs - Single - STW28N60M2 STW28N60M2

Description
Manufacturer: STMicroelectronics Win Source Part Number: 1262357-STW28N60M2 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.st.com Manufacturer Package: TO-247-3 Power Dissipation (Maximum): 170W Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 30 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 600V Id - Continuous Drain Current: 24A Rds On (Maximum) at Id, Vgs: 150mOhm at 12A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 37nC at 10V Gate Source Voltage (Maximum): ±25V Input Capacitance (Ciss) (Maximum) at Vds: 1370pF at 100V
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 1262357-STW28N60M2 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.st.com Manufacturer Package: TO-247-3 Power Dissipation (Maximum): 170W Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 30 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 600V Id - Continuous Drain Current: 24A Rds On (Maximum) at Id, Vgs: 150mOhm at 12A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 37nC at 10V Gate Source Voltage (Maximum): ±25V Input Capacitance (Ciss) (Maximum) at Vds: 1370pF at 100V
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Suppliers

Company
Product
Description
Supplier Links
FETs - Single - STW28N60M2 - 1262357-STW28N60M2 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - STW28N60M2
1262357-STW28N60M2
FETs - Single - STW28N60M2 1262357-STW28N60M2
Manufacturer: STMicroelectronics Win Source Part Number: 1262357-STW28N60M2 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.st.com Manufacturer Package: TO-247-3 Power Dissipation (Maximum): 170W Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 30 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 600V Id - Continuous Drain Current: 24A Rds On (Maximum) at Id, Vgs: 150mOhm at 12A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 37nC at 10V Gate Source Voltage (Maximum): ±25V Input Capacitance (Ciss) (Maximum) at Vds: 1370pF at 100V

Manufacturer: STMicroelectronics
Win Source Part Number: 1262357-STW28N60M2
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-247-3
Power Dissipation (Maximum): 170W
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 30
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 600V
Id - Continuous Drain Current: 24A
Rds On (Maximum) at Id, Vgs: 150mOhm at 12A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 37nC at 10V
Gate Source Voltage (Maximum): ±25V
Input Capacitance (Ciss) (Maximum) at Vds: 1370pF at 100V

Buy Now
Single FETs, MOSFETs - STW28N60M2 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STW28N60M2
Single FETs, MOSFETs STW28N60M2
MOSFET N-CH 600V 24A TO247

MOSFET N-CH 600V 24A TO247

Supplier's Site Datasheet
Singapore
600V 24A MOSFET Transistor
278-STW28N60M2
600V 24A MOSFET Transistor 278-STW28N60M2
600V 24A N-CH MOSFET TO-247 Power Transistor Product overview: STW28N60M2 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 24A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 24A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STW28N60M2 can be used for catalog matching and distributor lookup.

600V 24A N-CH MOSFET TO-247 Power Transistor Product overview: STW28N60M2 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 24A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 24A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STW28N60M2 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - 497-14292-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-14292-5-ND
Single FETs, MOSFETs 497-14292-5-ND
N-Channel 600V 24A (Tc) 170W (Tc) Through Hole TO-247-3

N-Channel 600V 24A (Tc) 170W (Tc) Through Hole TO-247-3

Buy Now Datasheet
Mosfet, N-Ch, 600V, 22A, To-247; Channel Type Stmicroelectronics - 45AC7784 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 600V, 22A, To-247; Channel Type Stmicroelectronics
45AC7784
Mosfet, N-Ch, 600V, 22A, To-247; Channel Type Stmicroelectronics 45AC7784
MOSFET, N-CH, 600V, 22A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:22A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

MOSFET, N-CH, 600V, 22A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:22A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STW28N60M2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STW28N60M2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STW28N60M2
MOSFET N-CH 600V 24A TO247

MOSFET N-CH 600V 24A TO247

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-CH 600V 0.135Ohm typ. 22A MDmesh M2

MOSFET N-CH 600V 0.135Ohm typ. 22A MDmesh M2

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. DigiKey Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1262357-STW28N60M2 STW28N60M2 278-STW28N60M2 497-14292-5-ND 45AC7784 STW28N60M2 STW28N60M2
Product Name FETs - Single - STW28N60M2 Single FETs, MOSFETs 600V 24A MOSFET Transistor Single FETs, MOSFETs Mosfet, N-Ch, 600V, 22A, To-247; Channel Type Stmicroelectronics Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 600 volts 600 volts
PD 170000 milliwatts 170000 milliwatts 170000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 C (-67 F)
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