STMicroelectronics, Inc. Single FETs, MOSFETs STW28N60M2

Description
MOSFET N-CH 600V 24A TO247
  • Single FETs, MOSFETs - STW28N60M2 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • FETs - Single - STW28N60M2 - 1262357-STW28N60M2 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - 497-14292-5-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STW28N60M2 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N-Ch, 600V, 22A, To-247; Channel Type Stmicroelectronics - 45AC7784 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
MOSFET N-CH 600V 24A TO247
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - STW28N60M2 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STW28N60M2
Single FETs, MOSFETs STW28N60M2
MOSFET N-CH 600V 24A TO247

MOSFET N-CH 600V 24A TO247

Supplier's Site Datasheet
FETs - Single - STW28N60M2 - 1262357-STW28N60M2 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - STW28N60M2
1262357-STW28N60M2
FETs - Single - STW28N60M2 1262357-STW28N60M2
Manufacturer: STMicroelectronics Win Source Part Number: 1262357-STW28N60M2 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.st.com Manufacturer Package: TO-247-3 Power Dissipation (Maximum): 170W Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 30 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 600V Id - Continuous Drain Current: 24A Rds On (Maximum) at Id, Vgs: 150mOhm at 12A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 37nC at 10V Gate Source Voltage (Maximum): ±25V Input Capacitance (Ciss) (Maximum) at Vds: 1370pF at 100V

Manufacturer: STMicroelectronics
Win Source Part Number: 1262357-STW28N60M2
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-247-3
Power Dissipation (Maximum): 170W
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 30
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 600V
Id - Continuous Drain Current: 24A
Rds On (Maximum) at Id, Vgs: 150mOhm at 12A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 37nC at 10V
Gate Source Voltage (Maximum): ±25V
Input Capacitance (Ciss) (Maximum) at Vds: 1370pF at 100V

Buy Now
Single FETs, MOSFETs - 497-14292-5-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-14292-5-ND
Single FETs, MOSFETs 497-14292-5-ND
N-Channel 600V 24A (Tc) 170W (Tc) Through Hole TO-247-3

N-Channel 600V 24A (Tc) 170W (Tc) Through Hole TO-247-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STW28N60M2 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STW28N60M2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STW28N60M2
MOSFET N-CH 600V 24A TO247

MOSFET N-CH 600V 24A TO247

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
STW28N60M2
MOSFET STW28N60M2
MOSFET N-CH 600V 0.135Ohm typ. 22A MDmesh M2

MOSFET N-CH 600V 0.135Ohm typ. 22A MDmesh M2

Buy Now Datasheet
Mosfet, N-Ch, 600V, 22A, To-247; Channel Type Stmicroelectronics - 45AC7784 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 600V, 22A, To-247; Channel Type Stmicroelectronics
45AC7784
Mosfet, N-Ch, 600V, 22A, To-247; Channel Type Stmicroelectronics 45AC7784
MOSFET, N-CH, 600V, 22A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:22A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

MOSFET, N-CH, 600V, 22A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:22A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number STW28N60M2 1262357-STW28N60M2 497-14292-5-ND STW28N60M2 STW28N60M2 45AC7784
Product Name Single FETs, MOSFETs FETs - Single - STW28N60M2 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Mosfet, N-Ch, 600V, 22A, To-247; Channel Type Stmicroelectronics
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 600 volts 600 volts
IDSS 24000 milliamps 22000 milliamps
Unlock Full Specs
to access all available technical data