STMicroelectronics, Inc. Single FETs, MOSFETs STW27N60M2-EP

Description
MOSFET N-CH 600V 20A TO247-3
Request a Quote Datasheet
Description
MOSFET N-CH 600V 20A TO247-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - STW27N60M2-EP - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STW27N60M2-EP
Single FETs, MOSFETs STW27N60M2-EP
MOSFET N-CH 600V 20A TO247-3

MOSFET N-CH 600V 20A TO247-3

Supplier's Site Datasheet
Single FETs, MOSFETs - 497-16490-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-16490-5-ND
Single FETs, MOSFETs 497-16490-5-ND
N-Channel 600V 20A (Tc) 170W (Tc) Through Hole TO-247-3

N-Channel 600V 20A (Tc) 170W (Tc) Through Hole TO-247-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1174805-STW27N60M2-EP - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1174805-STW27N60M2-EP
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1174805-STW27N60M2-EP
Win Source Part Number: 1174805-STW27N60M2-E P Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: MDmesh™ M2-EP Package: Tube Standard Package: 30 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 163mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 4.75V @ 250µA Power Dissipation (Max): 170W (Tc) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3 Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 100 V Vgs (Max): ±25V Temperature Range - Operating: -55°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): STW27N60M2-EP.; STW27N60M2EP; ECCN: EAR99 Fake Threat In the Open Market: 65 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: STMicroelectronics Other Names: 497-16490-5 Base Product Number: STW27 Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1174805-STW27N60M2-EP
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: MDmesh™ M2-EP
Package: Tube
Standard Package: 30
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 163mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Power Dissipation (Max): 170W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 100 V
Vgs (Max): ±25V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): STW27N60M2-EP.; STW27N60M2EP;
ECCN: EAR99
Fake Threat In the Open Market: 65 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: 497-16490-5
Base Product Number: STW27
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STW27N60M2-EP - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STW27N60M2-EP
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STW27N60M2-EP
MOSFET N-CH 600V 20A TO247-3

MOSFET N-CH 600V 20A TO247-3

Supplier's Site
Mosfet, N-Ch, 600V, 20A, To-247; Transistor Polarity Stmicroelectronics - 34AC1985 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 600V, 20A, To-247; Transistor Polarity Stmicroelectronics
34AC1985
Mosfet, N-Ch, 600V, 20A, To-247; Transistor Polarity Stmicroelectronics 34AC1985
MOSFET, N-CH, 600V, 20A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.15ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation RoHS Compliant: Yes

MOSFET, N-CH, 600V, 20A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.15ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation RoHS Compliant: Yes

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET N-channel 600 V, 0.150 Ohm typ., 20 A MDmesh M2 EP Power MOSFET in a TO-247 package

MOSFET N-channel 600 V, 0.150 Ohm typ., 20 A MDmesh M2 EP Power MOSFET in a TO-247 package

Buy Now Datasheet

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number STW27N60M2-EP 497-16490-5-ND 1174805-STW27N60M2-EP STW27N60M2-EP 34AC1985 STW27N60M2-EP
Product Name Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 600V, 20A, To-247; Transistor Polarity Stmicroelectronics MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 600 volts
IDSS 20000 milliamps 20000 milliamps
PD 170000 milliwatts 170000 milliwatts
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