STMicroelectronics, Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single STW27N60M2-EP

Description
Win Source Part Number: 1174805-STW27N60M2-E P Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: MDmesh™ M2-EP Package: Tube Standard Package: 30 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 163mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 4.75V @ 250µA Power Dissipation (Max): 170W (Tc) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3 Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 100 V Vgs (Max): ±25V Temperature Range - Operating: -55°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): STW27N60M2-EP.; STW27N60M2EP; ECCN: EAR99 Fake Threat In the Open Market: 65 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: STMicroelectronics Other Names: 497-16490-5 Base Product Number: STW27 Drive Voltage (Max Rds On, Min Rds On): 10V
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1174805-STW27N60M2-EP - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - STW27N60M2-EP - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - 497-16490-5-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STW27N60M2-EP - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N-Ch, 600V, 20A, To-247; Transistor Polarity Stmicroelectronics - 34AC1985 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Win Source Part Number: 1174805-STW27N60M2-E P Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: MDmesh™ M2-EP Package: Tube Standard Package: 30 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 163mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 4.75V @ 250µA Power Dissipation (Max): 170W (Tc) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3 Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 100 V Vgs (Max): ±25V Temperature Range - Operating: -55°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): STW27N60M2-EP.; STW27N60M2EP; ECCN: EAR99 Fake Threat In the Open Market: 65 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: STMicroelectronics Other Names: 497-16490-5 Base Product Number: STW27 Drive Voltage (Max Rds On, Min Rds On): 10V
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1174805-STW27N60M2-EP - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1174805-STW27N60M2-EP
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1174805-STW27N60M2-EP
Win Source Part Number: 1174805-STW27N60M2-E P Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: MDmesh™ M2-EP Package: Tube Standard Package: 30 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 163mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 4.75V @ 250µA Power Dissipation (Max): 170W (Tc) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3 Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 100 V Vgs (Max): ±25V Temperature Range - Operating: -55°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): STW27N60M2-EP.; STW27N60M2EP; ECCN: EAR99 Fake Threat In the Open Market: 65 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: STMicroelectronics Other Names: 497-16490-5 Base Product Number: STW27 Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1174805-STW27N60M2-EP
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: MDmesh™ M2-EP
Package: Tube
Standard Package: 30
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 163mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Power Dissipation (Max): 170W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 100 V
Vgs (Max): ±25V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): STW27N60M2-EP.; STW27N60M2EP;
ECCN: EAR99
Fake Threat In the Open Market: 65 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: 497-16490-5
Base Product Number: STW27
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Single FETs, MOSFETs - STW27N60M2-EP - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STW27N60M2-EP
Single FETs, MOSFETs STW27N60M2-EP
MOSFET N-CH 600V 20A TO247-3

MOSFET N-CH 600V 20A TO247-3

Supplier's Site Datasheet
Single FETs, MOSFETs - 497-16490-5-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-16490-5-ND
Single FETs, MOSFETs 497-16490-5-ND
N-Channel 600V 20A (Tc) 170W (Tc) Through Hole TO-247-3

N-Channel 600V 20A (Tc) 170W (Tc) Through Hole TO-247-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STW27N60M2-EP - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STW27N60M2-EP
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STW27N60M2-EP
MOSFET N-CH 600V 20A TO247-3

MOSFET N-CH 600V 20A TO247-3

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
STW27N60M2-EP
MOSFET STW27N60M2-EP
MOSFET N-channel 600 V, 0.150 Ohm typ., 20 A MDmesh M2 EP Power MOSFET in a TO-247 package

MOSFET N-channel 600 V, 0.150 Ohm typ., 20 A MDmesh M2 EP Power MOSFET in a TO-247 package

Buy Now Datasheet
Mosfet, N-Ch, 600V, 20A, To-247; Transistor Polarity Stmicroelectronics - 34AC1985 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 600V, 20A, To-247; Transistor Polarity Stmicroelectronics
34AC1985
Mosfet, N-Ch, 600V, 20A, To-247; Transistor Polarity Stmicroelectronics 34AC1985
MOSFET, N-CH, 600V, 20A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.15ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation RoHS Compliant: Yes

MOSFET, N-CH, 600V, 20A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.15ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1174805-STW27N60M2-EP STW27N60M2-EP 497-16490-5-ND STW27N60M2-EP STW27N60M2-EP 34AC1985
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Mosfet, N-Ch, 600V, 20A, To-247; Transistor Polarity Stmicroelectronics
Polarity N-Channel N-Channel; N-Channel N-Channel
PD 170000 milliwatts 170000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-247; SOT3 TO-247; TO-247-3 TO-247; TO-247-3 TO-247; TO-247-3 TO-3; TO-247
Transistor Technology / Material MOSFET (Metal Oxide)
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