N-channel 600 V, 0.150 Ohm typ., 20 A MDmesh M2 EP Power MOSFET in a TO-247 package Product overview: STW27N60M2-EP from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600 V, 0.150 Ohm, 20 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600 V, 0.150 Ohm, 20 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STW27N60M2-EP can be used for catalog matching and distributor lookup.
Win Source Part Number: 1174805-STW27N60M2-E
Category: Discrete Semiconductor Products>Transistors
Series: MDmesh™ M2-EP
Package: Tube
Standard Package: 30
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 163mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Power Dissipation (Max): 170W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 100 V
Vgs (Max): ±25V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): STW27N60M2-EP.; STW27N60M2EP;
ECCN: EAR99
Fake Threat In the Open Market: 65 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: 497-16490-5
Base Product Number: STW27
Drive Voltage (Max Rds On, Min Rds On): 10V
MOSFET N-CH 600V 20A TO247-3
N-Channel 600V 20A (Tc) 170W (Tc) Through Hole TO-247-3
MOSFET N-CH 600V 20A TO247-3
MOSFET N-channel 600 V, 0.150 Ohm typ., 20 A MDmesh M2 EP Power MOSFET in a TO-247 package
MOSFET, N-CH, 600V, 20A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.15ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-STW27N60M2-EP | 1174805-STW27N60M2-EP | STW27N60M2-EP | 497-16490-5-ND | STW27N60M2-EP | STW27N60M2-EP | 34AC1985 |
| Product Name | N-Channel 600 V 0.150 Ohm 20 A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 600V, 20A, To-247; Transistor Polarity Stmicroelectronics |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | ||||
| PD | 170000 milliwatts | 170000 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | TO-247; SOT3 | TO-247; TO-247-3 | TO-247; TO-247-3 | TO-247; TO-247-3 | TO-3; TO-247 | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
