Win Source Part Number: 1278131-STW26NM60ND
Category: Discrete Semiconductor Products>Transistors
Series: FDmesh™ II
Package: Tube
Standard Package: 30
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 175mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 190W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Gate Charge (Qg) (Max) @ Vgs: 54.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1817 pF @ 100 V
Vgs (Max): ±25V
Temperature Range - Operating: 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 64 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: 497-14225-5,-497-142
Base Product Number: STW26N
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
N-Channel 600V 21A (Tc) 190W (Tc) Through Hole TO-247-3
MOSFET N-CH 600V 21A TO247
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Transistors | Transistors | RF Transistors |
| Product Number | 1278131-STW26NM60ND | 497-14225-5-ND | STW26NM60ND |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel |
