Manufacturer: STMicroelectronics
Win Source Part Number: 212432-STW26NM50
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 313W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-247-3
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 30A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 106nC @ 10V
Max Input Capacitance: 3000pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 120 mOhm @ 13A, 10V
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Limited
Application Field: Used in Industrial
N-Channel 500V 30A (Tc) 313W (Tc) Through Hole TO-247-3
MOSFET N-CH 500V 30A TO247-3
500V 30A N-CH MOSFET TO-247 120mR MDmesh Product overview: STW26NM50 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 30A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 30A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STW26NM50 can be used for catalog matching and distributor lookup.
MOSFET Transistor, N Channel, 30 A, 500 V, 120 mohm, 10 V, 4 V RoHS Compliant: No
MOSFET;N-Ch;VDSS 500V;RDS(ON) 0.1Ohm;ID30A;TO-247;
MOSFET TRANSISTOR, N CHANNEL, 30 A, 500 V, 120 MOHM, 10 V, 4 V ROHS COMPLIANT: NO, TO-247. FREE 2 YEAR RADWELL WARRANTY
MOSFET N-CH 500V 30A TO247-3
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Allied Electronics, Inc. | Radwell International | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors |
| Product Number | 212432-STW26NM50 | 497-3264-5-ND | STW26NM50 | 278-STW26NM50 | STW26NM50 | 59M2219 | 70014113 | 16478037 | STW26NM50 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW26NM50 | Single FETs, MOSFETs | Single FETs, MOSFETs | 500V 30A MOSFET Transistor | MOSFET | Mosfet Transistor, N Channel, 30 A, 500 V, 120 Mohm, 10 V, 4 V Rohs Compliant Stmicroelectronics | MOSFET;N-Ch;VDSS 500V;RDS(ON) 0.1Ohm;ID30A;TO-247;PD 313W;VGS +/-30V;gFS 20S | Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | |||
| V(BR)DSS | 500 volts | 500 volts | 500 volts | ||||||
| PD | 313000 milliwatts | 313000 milliwatts | 313000 milliwatts | 313000 milliwatts | |||||
| TJ | 150 C (302 F) | 150 C (302 F) | -55 C (-67 F) | ||||||
| Package Type | TO-247; SOT3; TO-247-3 | TO-247; TO-247-3 | TO-247; TO-247-3 | TO-3 | TO-247 | 10V |
