STMicroelectronics, Inc. Single FETs, MOSFETs STW26N65DM2

MOSFET N-CH 650V 20A TO247

N-Channel 650V 20A (Tc) 170W (Tc) Through Hole TO-247-3

N-channel 650 V, 0.156 Ohm typ., 20 A MDmesh DM2 Power MOSFET in a TO-247 package Product overview: STW26N65DM2 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 650 V, 0.156 Ohm, 20 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650 V, 0.156 Ohm, 20 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STW26N65DM2 can be used for catalog matching and distributor lookup.

Win Source Part Number: 1158374-STW26N65DM2
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: MDmesh™ DM2
Package: Tube
Standard Package: 600
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 170W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Gate Charge (Qg) (Max) @ Vgs: 35.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 100 V
Vgs (Max): ±25V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 45 pct.
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Base Product Number: STW26
Drive Voltage (Max Rds On, Min Rds On): 10V