MOSFET N-CH 500V 22A TO247-3
Manufacturer: STMicroelectronics
Win Source Part Number: 037814-STW25NM50N
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 160W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247-3
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 22A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 84nC @ 10V
Max Input Capacitance: 2565pF @ 25V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 140 mOhm @ 11A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Limited
N-Channel 500V 22A (Tc) 160W (Tc) Through Hole TO-247-3
MOSFET N-CH 500V 22A TO247-3
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | STW25NM50N | 037814-STW25NM50N | 497-4675-5-ND | STW25NM50N |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW25NM50N | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | |
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||
| V(BR)DSS | 500 volts | 500 volts | ||
| IDSS | 22000 milliamps |
