MOSFET N-CH 950V 22A TO247
Manufacturer: STMicroelectronics
Win Source Part Number: 1104037-STW25N95K3
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 400W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 950V
Continuous Drain Current at 25°C: 22A (Tc)
Gate-Source Threshold Voltage: 5V @ 150μA
Max Gate Charge: 105nC @ 10V
Max Input Capacitance: 3680pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 360 mOhm @ 11A, 10V
Alternative Parts (Cross-Reference): IPW90R340C3; STW23N85K5; STW25N95K3; STW15N95K5;
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Limited
N-Channel 950V 22A (Tc) 400W (Tc) Through Hole TO-247-3
MOSFET, N CHANNEL, 950V, 22A, TO-247; Transistor Polarity:N Channel; Drain Source Voltage Vds:950V; Continuous Drain Current Id:22A; On Resistance Rds(on):0.32ohm; Transistor Mounting:Through Hole; Rds(on) Test Voltage Vgs:10V; MSL:-RoHS Compliant: Yes
MOSFET N-CH 950V 22A TO247
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | STW25N95K3 | 1104037-STW25N95K3 | 497-11148-5-ND | 47T9445 | STW25N95K3 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW25N95K3 | Single FETs, MOSFETs | Mosfet, N Channel, 950V, 22A, To-247; Transistor Polarity Stmicroelectronics | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||
| V(BR)DSS | 950 volts | 950 volts | |||
| IDSS | 22000 milliamps | 22000 milliamps | |||
| PD | 400000 milliwatts | 400000 milliwatts |