STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW24NM65N STW24NM65N

Description
Manufacturer: STMicroelectronics Win Source Part Number: 038538-STW24NM65N Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 160W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247-3 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 19A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 70nC @ 10V Max Input Capacitance: 2500pF @ 50V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 190 mOhm @ 9.5A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance Quantity per package: 30
Request a Quote Datasheet
Description
Manufacturer: STMicroelectronics Win Source Part Number: 038538-STW24NM65N Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 160W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247-3 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 19A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 70nC @ 10V Max Input Capacitance: 2500pF @ 50V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 190 mOhm @ 9.5A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance Quantity per package: 30
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW24NM65N - 038538-STW24NM65N - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW24NM65N
038538-STW24NM65N
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW24NM65N 038538-STW24NM65N
Manufacturer: STMicroelectronics Win Source Part Number: 038538-STW24NM65N Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 160W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247-3 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 19A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 70nC @ 10V Max Input Capacitance: 2500pF @ 50V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 190 mOhm @ 9.5A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance Quantity per package: 30

Manufacturer: STMicroelectronics
Win Source Part Number: 038538-STW24NM65N
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 160W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247-3
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 19A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 70nC @ 10V
Max Input Capacitance: 2500pF @ 50V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 190 mOhm @ 9.5A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Balance
Quantity per package: 30

Buy Now Datasheet
Single FETs, MOSFETs - 497-7035-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-7035-5-ND
Single FETs, MOSFETs 497-7035-5-ND
N-Channel 650V 19A (Tc) 160W (Tc) Through Hole TO-247-3

N-Channel 650V 19A (Tc) 160W (Tc) Through Hole TO-247-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STW24NM65N - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STW24NM65N
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STW24NM65N
MOSFET N-CH 650V 19A TO247-3

MOSFET N-CH 650V 19A TO247-3

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 038538-STW24NM65N 497-7035-5-ND STW24NM65N
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW24NM65N Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 650 volts
PD 160000 milliwatts
Unlock Full Specs
to access all available technical data

Similar Products