STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW24NM60N STW24NM60N

Description
Manufacturer: STMicroelectronics Win Source Part Number: 054055-STW24NM60N Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 125W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 17A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 46nC @ 10V Max Input Capacitance: 1400pF @ 50V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 190 mOhm @ 8A, 10V Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Balance
Request a Quote Datasheet
Description
Manufacturer: STMicroelectronics Win Source Part Number: 054055-STW24NM60N Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 125W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 17A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 46nC @ 10V Max Input Capacitance: 1400pF @ 50V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 190 mOhm @ 8A, 10V Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW24NM60N - 054055-STW24NM60N - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW24NM60N
054055-STW24NM60N
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW24NM60N 054055-STW24NM60N
Manufacturer: STMicroelectronics Win Source Part Number: 054055-STW24NM60N Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 125W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 17A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 46nC @ 10V Max Input Capacitance: 1400pF @ 50V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 190 mOhm @ 8A, 10V Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 054055-STW24NM60N
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 125W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 17A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 46nC @ 10V
Max Input Capacitance: 1400pF @ 50V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 190 mOhm @ 8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
600V 17A MOSFET Transistor
278-STW24NM60N
600V 17A MOSFET Transistor 278-STW24NM60N
600V N-CH MOSFET, 17A, 190mR, TO-247 Product overview: STW24NM60N from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 17A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 17A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STW24NM60N can be used for catalog matching and distributor lookup.

600V N-CH MOSFET, 17A, 190mR, TO-247 Product overview: STW24NM60N from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 17A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 17A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STW24NM60N can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - 497-STW24NM60N-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-STW24NM60N-ND
Single FETs, MOSFETs 497-STW24NM60N-ND
N-Channel 600V 17A (Tc) 125W (Tc) Through Hole TO-247-3

N-Channel 600V 17A (Tc) 125W (Tc) Through Hole TO-247-3

Buy Now Datasheet
Mosfet, N Ch, 600V, 17A, To-247; Transistor Polarity Stmicroelectronics - 59T6719 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Ch, 600V, 17A, To-247; Transistor Polarity Stmicroelectronics
59T6719
Mosfet, N Ch, 600V, 17A, To-247; Transistor Polarity Stmicroelectronics 59T6719
MOSFET, N CH, 600V, 17A, TO-247; Transistor Polarity:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:17A; On Resistance Rds(on):0.168ohm; Transistor Mounting:Through Hole; Rds(on) Test Voltage Vgs:10V; MSL:- RoHS Compliant: Yes

MOSFET, N CH, 600V, 17A, TO-247; Transistor Polarity:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:17A; On Resistance Rds(on):0.168ohm; Transistor Mounting:Through Hole; Rds(on) Test Voltage Vgs:10V; MSL:- RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STW24NM60N - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STW24NM60N
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STW24NM60N
MOSFET N-CH 600V 17A TO247

MOSFET N-CH 600V 17A TO247

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-Ch 600V 0.18 Ohm 17A MDmesh II

MOSFET N-Ch 600V 0.18 Ohm 17A MDmesh II

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 054055-STW24NM60N 278-STW24NM60N 497-STW24NM60N-ND 59T6719 STW24NM60N STW24NM60N
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW24NM60N 600V 17A MOSFET Transistor Single FETs, MOSFETs Mosfet, N Ch, 600V, 17A, To-247; Transistor Polarity Stmicroelectronics Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 600 volts
PD 125000 milliwatts 125000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F)
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