N-Channel 900V 18.5A (Tc) 250W (Tc) Through Hole TO-247-3
Manufacturer: STMicroelectronics
Win Source Part Number: 212430-STW21N90K5
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
FET Feature: Current Sensing
Polarity: N-Channel
Power Dissipation (Max): 250W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247-3
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 900V
Continuous Drain Current at 25°C: 18.5A (Tc)
Gate-Source Threshold Voltage: 5V @ 100μA
Max Gate Charge: 43nC @ 10V
Max Input Capacitance: 1645pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 299 mOhm @ 9A, 10V
Alternative Parts (Cross-Reference): APT37M100B2; IXFK30N100Q2SN; STW22N95K5; STW21N90K5;
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Limited
900V N-CH Power MOSFET TO-247 18.5A Product overview: STW21N90K5 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 900V, 18.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 900V, 18.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STW21N90K5 can be used for catalog matching and distributor lookup.
MOSFET N-CH 900V 18.5A TO247-3
MOSFET N-CH 900V 18.5A TO247-3
MOSFET, N-CH, 900V, 18.5A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:18.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
MOSFET N-Ch 900V 0.25 Ohm 18.5A MDmesh K5
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 497-12873-5-ND | 212430-STW21N90K5 | 278-STW21N90K5 | STW21N90K5 | STW21N90K5 | 45AC7780 | STW21N90K5 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW21N90K5 | 900V 18.5A MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 900V, 18.5A, To-247; Channel Type Stmicroelectronics | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | ||||
| Package Type | TO-247; TO-247-3 | TO-247; SOT3; TO-247-3 | TO-247; TO-247-3 | Through Hole | TO-3; TO-247 | ||
| V(BR)DSS | 900 volts | 900 volts | 900 volts | ||||
| PD | 250000 milliwatts | 250000 milliwatts | 250000 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |
