POWER FIELD-EFFECT TRANSISTOR, 20A I(D), 500V, 0.25OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-247. FREE 2 YEAR RADWELL WARRANTY
Manufacturer: STMicroelectronics
Win Source Part Number: 031592-STW20NM50FD
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 214W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-247-3
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 20A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 53nC @ 10V
Max Input Capacitance: 1380pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 250 mOhm @ 10A, 10V
Alternative Parts (Cross-Reference): IXTK33N50; STW19NM50N; STW20NK50Z;
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Limited
N-Channel 500V 20A (Tc) 214W (Tc) Through Hole TO-247-3
MOSFET N-CH 500V 20A TO247-3
MOSFET Transistor, N Channel, 20 A, 500 V, 250 mohm, 10 V, 4 V RoHS Compliant: Yes
MOSFET N-CH 500V 20A TO247-3
| Radwell International | Win Source Electronics | DigiKey | ODG (Origin Data Global) | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 16478029 | 031592-STW20NM50FD | 497-2717-5-ND | STW20NM50FD | 26M3817 | STW20NM50FD | STW20NM50FD |
| Product Name | Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW20NM50FD | Single FETs, MOSFETs | Single FETs, MOSFETs | Mosfet Transistor, N Channel, 20 A, 500 V, 250 Mohm, 10 V, 4 V Rohs Compliant Stmicroelectronics | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||
| V(BR)DSS | 500 volts | 500 volts | |||||
| PD | 214000 milliwatts | 214000 milliwatts | |||||
| TJ | 150 C (302 F) | 150 C (302 F) |
