N-Channel 650V 15.5A (Tc) 150W (Tc) Through Hole TO-247-3
Manufacturer: STMicroelectronics
Win Source Part Number: 212427-STW19NM65N
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 150W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-247-3
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 15.5A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 55nC @ 10V
Max Input Capacitance: 1900pF @ 50V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 270 mOhm @ 7.75A, 10V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance
MOSFET N-CH 650V 15.5A TO247-3
| DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 497-7033-5-ND | 212427-STW19NM65N | STW19NM65N |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW19NM65N | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | |
| Package Type | TO-247; TO-247-3 | TO-247; SOT3; TO-247-3 | TO-247; TO-247-3 |
| V(BR)DSS | 650 volts |
