STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW19NM60N STW19NM60N

Description
Manufacturer: STMicroelectronics Win Source Part Number: 1104031-STW19NM60N Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 110W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 13A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 35nC @ 10V Max Input Capacitance: 1000pF @ 50V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 285 mOhm @ 6.5A, 10V Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Balance
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 1104031-STW19NM60N Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 110W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 13A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 35nC @ 10V Max Input Capacitance: 1000pF @ 50V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 285 mOhm @ 6.5A, 10V Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW19NM60N - 1104031-STW19NM60N - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW19NM60N
1104031-STW19NM60N
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW19NM60N 1104031-STW19NM60N
Manufacturer: STMicroelectronics Win Source Part Number: 1104031-STW19NM60N Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 110W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 13A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 35nC @ 10V Max Input Capacitance: 1000pF @ 50V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 285 mOhm @ 6.5A, 10V Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 1104031-STW19NM60N
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 110W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 13A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 35nC @ 10V
Max Input Capacitance: 1000pF @ 50V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 285 mOhm @ 6.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - 497-13792-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-13792-5-ND
Single FETs, MOSFETs 497-13792-5-ND
N-Channel 600V 13A (Tc) 110W (Tc) Through Hole TO-247-3

N-Channel 600V 13A (Tc) 110W (Tc) Through Hole TO-247-3

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Sheung Wan, Hong Kong
MOSFET N-Ch 600 V 0.27 Ohm 13 A MDmesh(TM)

MOSFET N-Ch 600 V 0.27 Ohm 13 A MDmesh(TM)

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STW19NM60N - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STW19NM60N
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STW19NM60N
MOSFET N-CH 600V 13A TO247

MOSFET N-CH 600V 13A TO247

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1104031-STW19NM60N 497-13792-5-ND STW19NM60N STW19NM60N
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW19NM60N Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 600 volts
PD 110000 milliwatts
TJ -55 to 150 C (-67 to 302 F)
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