STMicroelectronics, Inc. Single FETs, MOSFETs STW18NK80Z

Description
N-Channel 800V 19A (Tc) 350W (Tc) Through Hole TO-247-3
Request a Quote Datasheet
Description
N-Channel 800V 19A (Tc) 350W (Tc) Through Hole TO-247-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 497-4423-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-4423-5-ND
Single FETs, MOSFETs 497-4423-5-ND
N-Channel 800V 19A (Tc) 350W (Tc) Through Hole TO-247-3

N-Channel 800V 19A (Tc) 350W (Tc) Through Hole TO-247-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW18NK80Z - 1104030-STW18NK80Z - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW18NK80Z
1104030-STW18NK80Z
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW18NK80Z 1104030-STW18NK80Z
Manufacturer: STMicroelectronics Win Source Part Number: 1104030-STW18NK80Z Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 350W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247-3 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 19A (Tc) Gate-Source Threshold Voltage: 4.5V @ 150μA Max Gate Charge: 250nC @ 10V Max Input Capacitance: 6100pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 380 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 1104030-STW18NK80Z
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 350W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247-3
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 19A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 150μA
Max Gate Charge: 250nC @ 10V
Max Input Capacitance: 6100pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 380 mOhm @ 10A, 10V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - STW18NK80Z - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STW18NK80Z
Single FETs, MOSFETs STW18NK80Z
MOSFET N-CH 800V 19A TO247-3

MOSFET N-CH 800V 19A TO247-3

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STW18NK80Z - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STW18NK80Z
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STW18NK80Z
MOSFET N-CH 800V 19A TO247-3

MOSFET N-CH 800V 19A TO247-3

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 497-4423-5-ND 1104030-STW18NK80Z STW18NK80Z STW18NK80Z
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW18NK80Z Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel
Package Type TO-247; TO-247-3 TO-247; SOT3; TO-247-3 TO-247; TO-247-3 TO-247; TO-247-3
V(BR)DSS 800 volts 800 volts
PD 350000 milliwatts 350000 milliwatts
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