STMicroelectronics, Inc. FETs - Single - STW18N60M2 STW18N60M2

Manufacturer: STMicroelectronics
Win Source Part Number: 800665-STW18N60M2
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600V
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: TO-247-3
Power Dissipation (Maximum): 110W (Tc)
Popularity: High
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Sufficient
Manufacturer Pack Quantity: 30
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 280mOhm at 6.5A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 21.5nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 791pF at 100V
Current - Continuous Drain (Id) at 25°C: 13A (Tc)
Vgs(th) (Maximum) at Id: 4V at 250μA
Part Number Series: STW18N
Maximum Vgs: ±25V

N-Channel 600V 13A (Tc) 110W (Tc) Through Hole TO-247-3

N-channel 600 V, 0.255 Ohm typ., 13 A MDmesh M2 Power MOSFET in TO-247 package Product overview: STW18N60M2 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600 V, 0.255 Ohm, 13 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600 V, 0.255 Ohm, 13 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STW18N60M2 can be used for catalog matching and distributor lookup.