N-Channel 600V 13A (Tc) 110W (Tc) Through Hole TO-247-3
Manufacturer: STMicroelectronics
Win Source Part Number: 800665-STW18N60M2
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600V
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: TO-247-3
Power Dissipation (Maximum): 110W (Tc)
Popularity: High
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Sufficient
Manufacturer Pack Quantity: 30
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 280mOhm at 6.5A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 21.5nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 791pF at 100V
Current - Continuous Drain (Id) at 25°C: 13A (Tc)
Vgs(th) (Maximum) at Id: 4V at 250μA
Part Number Series: STW18N
Maximum Vgs: ±25V
MOSFET N-CH 600V 13A TO247
MOSFET N-channel 600 V, 0.255 Ohm typ., 13 A MDmesh M2 Power MOSFET in TO-247 package
| DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 497-15284-5-ND | 800665-STW18N60M2 | STW18N60M2 | STW18N60M2 |
| Product Name | Single FETs, MOSFETs | FETs - Single - STW18N60M2 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel |
