STMicroelectronics, Inc. Single FETs, MOSFETs STW14NM50

Description
MOSFET N-CH 550V 14A TO247-3
Request a Quote Datasheet
Description
MOSFET N-CH 550V 14A TO247-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - STW14NM50 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STW14NM50
Single FETs, MOSFETs STW14NM50
MOSFET N-CH 550V 14A TO247-3

MOSFET N-CH 550V 14A TO247-3

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW14NM50 - 1104023-STW14NM50 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW14NM50
1104023-STW14NM50
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW14NM50 1104023-STW14NM50
Manufacturer: STMicroelectronics Win Source Part Number: 1104023-STW14NM50 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 175W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: TO-247-3 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 550V Continuous Drain Current at 25°C: 14A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 38nC @ 10V Max Input Capacitance: 1000pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 350 mOhm @ 6A, 10V Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 1104023-STW14NM50
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 175W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-247-3
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 550V
Continuous Drain Current at 25°C: 14A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 38nC @ 10V
Max Input Capacitance: 1000pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 350 mOhm @ 6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STW14NM50 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STW14NM50
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STW14NM50
MOSFET N-CH 550V 14A TO247-3

MOSFET N-CH 550V 14A TO247-3

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number STW14NM50 1104023-STW14NM50 STW14NM50
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW14NM50 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 550 volts 550 volts
IDSS 14000 milliamps
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