STMicroelectronics, Inc. Single FETs, MOSFETs STW13NB60

Description
N-Channel 600V 13A (Tc) 190W (Tc) Through Hole TO-247-3
Request a Quote Datasheet
Description
N-Channel 600V 13A (Tc) 190W (Tc) Through Hole TO-247-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 497-2772-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-2772-5-ND
Single FETs, MOSFETs 497-2772-5-ND
N-Channel 600V 13A (Tc) 190W (Tc) Through Hole TO-247-3

N-Channel 600V 13A (Tc) 190W (Tc) Through Hole TO-247-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW13NB60 - 054048-STW13NB60 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW13NB60
054048-STW13NB60
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW13NB60 054048-STW13NB60
Manufacturer: STMicroelectronics Win Source Part Number: 054048-STW13NB60 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 190W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: TO-247-3 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 13A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 82nC @ 10V Max Input Capacitance: 2600pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 540 mOhm @ 6.5A, 10V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 054048-STW13NB60
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 190W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-247-3
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 13A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 82nC @ 10V
Max Input Capacitance: 2600pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 540 mOhm @ 6.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Transistor - 66609358 - Radwell International
Willingboro, NJ, United States
Transistor
66609358
Transistor 66609358
TRANSISTOR 3PIN. FREE 2 YEAR RADWELL WARRANTY

TRANSISTOR 3PIN. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STW13NB60 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STW13NB60
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STW13NB60
MOSFET N-CH 600V 13A TO247-3

MOSFET N-CH 600V 13A TO247-3

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Radwell International Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors RF Transistors
Product Number 497-2772-5-ND 054048-STW13NB60 66609358 STW13NB60
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW13NB60 Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-247; TO-247-3 TO-247; SOT3; TO-247-3 TO-247; TO-247-3
V(BR)DSS 600 volts
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