Manufacturer: STMicroelectronics
Win Source Part Number: 1104021-STW13N95K3
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 190W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247-3
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 950V
Continuous Drain Current at 25°C: 10A (Tc)
Gate-Source Threshold Voltage: 5V @ 100μA
Max Gate Charge: 51nC @ 10V
Max Input Capacitance: 1620pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 850 mOhm @ 5A, 10V
Alternative Parts (Cross-Reference): IPW90R500C3; STW23N85K5; STW13NK100Z;
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Sufficient
N-Channel 950V 10A (Tc) 190W (Tc) Through Hole TO-247-3
MOSFET N-CH 950V 10A TO247-3
MOSFET, N CH, 950V, 10A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:950V; Continuous Drain Current Id:10A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
MOSFET N-Ch 950V SuperMESH3 Zener-Protected 10A
MOSFET N-CH 950V 10A TO247-3
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1104021-STW13N95K3 | 497-10772-5-ND | STW13N95K3 | 21T4047 | STW13N95K3 | STW13N95K3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW13N95K3 | Single FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, N Ch, 950V, 10A, To-247; Channel Type Stmicroelectronics | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | |||
| V(BR)DSS | 950 volts | 950 volts | ||||
| PD | 190000 milliwatts | 190000 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |