N-channel 800 V, 0.37 Ohm typ., 12 A MDmesh K5 Power MOSFET in TO-247 package Product overview: STW13N80K5 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 800 V, 0.37 Ohm, 12 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800 V, 0.37 Ohm, 12 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STW13N80K5 can be used for catalog matching and distributor lookup.
Manufacturer: STMicroelectronics
Win Source Part Number: 795828-STW13N80K5
Series: SuperMESH5
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-247-3
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Family Name: STW13N80K5
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: TO-247
Channel Type Type: N
Drain Source Voltage: 800V
Vgs(th) (Maximum) @ Id: 5V @ 100μA
Gate Charge (Qg) (Maximum) @ Vgs: 29nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 870pF @ 100V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 190W (Tc)
Rds On (Maximum) @ Id, Vgs: 450 mOhm @ 6A, 10V
Alternative Parts (Cross-Reference): SiHG11N80E-GE3; IXFR24N80P; SPW11N80C3; APT11N80BC3G;
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2031
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Limited
N-Channel 800V 12A (Tc) 190W (Tc) Through Hole TO-247-3
MOSFET, N-CH, 800V, 12A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:12A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
MOSFET N-channel 800 V, 0.37 Ohm typ., 12 A MDmesh K5 Power MOSFET in TO-247 package
MOSFET N-CH 800V 12A TO247
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-STW13N80K5 | 795828-STW13N80K5 | 497-15160-5-ND | 45AC7777 | STW13N80K5 | STW13N80K5 |
| Product Name | N-Channel 800 V 0.37 Ohm 12 A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW13N80K5 | Single FETs, MOSFETs | Mosfet, N-Ch, 800V, 12A, To-247; Channel Type Stmicroelectronics | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| PD | 190000 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | TO-247; SOT3 | TO-247; TO-247-3 | TO-3; TO-247 | TO-247; TO-247-3 |
