The STMicroelectronics N-channel MOSFET, part number 45AC7776, is rated for a maximum drain-source voltage of 600V and a continuous drain current of 11A. It features a low on-resistance of 0.35 Oc (typical) and is designed using MDmesh II Plus,Ñ¢ technology, which provides low gate charge and improved efficiency for high-performance applications. The device is avalanche rated and includes Zener protection, making it suitable for demanding switching applications. It is packaged in a TO-247 format, which is ideal for through-hole mounting. The MOSFET operates effectively within a temperature range of -55¬8C to 150¬8C and has a total power dissipation capability of 110W at a case temperature of 25¬8C.
MOSFET N-CH 600V 11A TO247
Manufacturer: STMicroelectronics
Win Source Part Number: 935667-STW13N60M2
Series: MDmesh™ II Plus
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 600 V 11A (Tc) 110W (Tc) Through Hole TO-247-3
Package: Tube
Package: TO-247-3
Mounting: Through Hole
Part Status: Obsolete
Family Name: STW13N
Categories: Discrete Semiconductor Products
Case / Package: TO-247-3
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 77 pct.
Supply and Demand Status: Balance
Quantity per package: 30
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: -497-15012-5, 497-15012-5
N-Channel 600V 11A (Tc) 110W (Tc) Through Hole TO-247-3
MOSFET N-CH 600V 11A TO247
MOSFET N-channel 600 V, 0.35 Ohm typ., 11 A MDmesh M2 Power MOSFET in TO-247 package
MOSFET, N-CH, 600V, 11A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:11A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | STW13N60M2 | 935667-STW13N60M2 | 497-15012-5-ND | STW13N60M2 | STW13N60M2 | 45AC7776 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW13N60M2 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 600V, 11A, To-247; Channel Type Stmicroelectronics |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 600 volts | |||||
| IDSS | 11000 milliamps | 11000 milliamps |
