MOSFET N-CH 900V 11A TO247-3
900V N-CH MOSFET, 11A, 880mR RdsOn, TO-247 Product overview: STW12NK90Z from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 900V, 11A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 900V, 11A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STW12NK90Z can be used for catalog matching and distributor lookup.
Manufacturer: STMicroelectronics
Win Source Part Number: 038391-STW12NK90Z
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 230W (Tc)
Family Name: STW12NK90
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247-3
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 900V
Continuous Drain Current at 25°C: 11A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 100μA
Max Gate Charge: 152nC @ 10V
Max Input Capacitance: 3500pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 880 mOhm @ 5.5A, 10V
Alternative Parts (Cross-Reference): IXFH14N100Q2; IXFH12N100QSN; IXFH10N100;
Introduction Date: July 01, 2003
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2026
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Balance
N-Channel 900V 11A (Tc) 230W (Tc) Through Hole TO-247-3
MOSFET N-CH 900V 11A TO247-3
POWER FIELD-EFFECT TRANSISTOR, 11A, 900V, .88OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-247. FREE 2 YEAR RADWELL WARRANTY
MOSFET N-Ch 900 Volt 11 Amp Zener SuperMESH
MOSFET, N-CH, 900V, 11A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:11A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V RoHS Compliant: Yes
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | RS Components, Ltd. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Radwell International | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | STW12NK90Z | 278-STW12NK90Z | 7610617P | 1031995 | 038391-STW12NK90Z | 497-4421-5-ND | STW12NK90Z | 49029385 | STW12NK90Z | 34X2882 |
| Product Name | Single FETs, MOSFETs | 900V 11A MOSFET Transistor | MOSFETs | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW12NK90Z | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Transistor | MOSFET | Mosfet, N-Ch, 900V, 11A, To-247; Channel Type Stmicroelectronics |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||||
| V(BR)DSS | 900 volts | 900 volts | ||||||||
| IDSS | 11000 milliamps | 11000 milliamps | ||||||||
| PD | 230000 milliwatts | 230000 milliwatts | 230000 milliwatts |
