600V 10A N-CH Power MOSFET TO-247 Product overview: STW12NK60Z from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 10A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 10A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STW12NK60Z can be used for catalog matching and distributor lookup.
Manufacturer: STMicroelectronics
Win Source Part Number: 898510-STW12NK60Z
Series: SuperMESH™
Operating Temperature Range: 150°C (TJ)
Features: N-Channel 600 V 10A (Tc) 150W (Tc) Through Hole TO-247-3
Package: Tube
Package: TO-247-3
Mounting: Through Hole
Part Status: Obsolete
Family Name: STW12N
Categories: Discrete Semiconductor Products
Case / Package: TO-247-3
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 92 pct.
Supply and Demand Status: Balance
Quantity per package: 30
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: 497-10995-5, STW12NK60Z-ND
N-Channel 600V 10A (Tc) 150W (Tc) Through Hole TO-247-3
MOSFET N-CH 600V 10A TO247-3
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | 278-STW12NK60Z | 898510-STW12NK60Z | 497-10995-5-ND | STW12NK60Z |
| Product Name | 600V 10A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW12NK60Z | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| MOSFET Operating Mode | Enhancement | |||
| V(BR)DSS | 600 volts | |||
| PD | 150000 milliwatts | |||
| TJ | -55 C (-67 F) | 150 C (302 F) |
