DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 11A I(D), 800V, 0.8OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-247. FREE 2 YEAR RADWELL WARRANTY
Manufacturer: STMicroelectronics
Win Source Part Number: 1104017-STW11NB80
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 190W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-247-3
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 11A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 70nC @ 10V
Max Input Capacitance: 2900pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 800 mOhm @ 5.5A, 10V
Alternative Parts (Cross-Reference): APT17F80B; STW9N80K5; IXFH17N80QSN;
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Balance
N-Channel 800V 11A (Tc) 190W (Tc) Through Hole TO-247-3
MOSFET N-CH 800V 11A TO247-3
MOSFET N-CH 800V 11A TO247-3
| Radwell International | Win Source Electronics | DigiKey | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 41820464 | 1104017-STW11NB80 | 497-2789-5-ND | STW11NB80 | STW11NB80 |
| Product Name | Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW11NB80 | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | ||
| V(BR)DSS | 800 volts | 800 volts | |||
| PD | 190000 milliwatts | 190000 milliwatts | |||
| TJ | 150 C (302 F) | 150 C (302 F) |
