MOSFET N-CH 800V 9A TO247-3
Manufacturer: STMicroelectronics
Win Source Part Number: 090306-STW10NK80Z
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 160W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247-3
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 9A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 100μA
Max Gate Charge: 72nC @ 10V
Max Input Capacitance: 2180pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 900 mOhm @ 4.5A, 10V
Alternative Parts (Cross-Reference): IXFH13N80Q; STW12NK80Z; STW9N80K5;
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance
N-Channel 800V 9A (Tc) 160W (Tc) Through Hole TO-247-3
MOSFET, N, TO-247; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:9A; DRAIN SOURCE VOLTAGE VDS:800V; ON RESISTANCE RDS(ON):900MOHM; RDS(ON. FREE 2 YEAR RADWELL WARRANTY
MOSFET N-Ch 800 Volt 9 Amp Zener SuperMESH
MOSFET, N, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:9A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; Power Dissipation:160W RoHS Compliant: Yes
MOSFET N-CH 800V 9A TO247-3
800V 9A 900mΩ@10V,4.5A 160W 4.5V@100uA N Channel TO-247-3 MOSFETs ROHS
Trans MOSFET N-CH 800V 9A 3-Pin(3+Tab) TO-247 Tube
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | RS Components, Ltd. | RS Components, Ltd. | Radwell International | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | LCSC Electronics Technology (HK) Limited | Utmel Electronic Limited | |
|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | STW10NK80Z | 090306-STW10NK80Z | 497-3254-5-ND | 4858572 | 4858572P | 38979614 | STW10NK80Z | 26M3810 | STW10NK80Z | STW10NK80Z | 761-STW10NK80Z |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW10NK80Z | Single FETs, MOSFETs | MOSFETs | MOSFETs | Transistor | MOSFET | Mosfet, N, To-247; Channel Type Stmicroelectronics | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs | Trans MOSFET N-CH 800V 9A 3-Pin(3+Tab) TO-247 Tube |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | |||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | SILICON | |||||||||
| V(BR)DSS | 800 volts | 800 volts | 800 volts | 800 volts | |||||||
| IDSS | 9000 milliamps | 9000 milliamps | |||||||||
| PD | 160000 milliwatts | 160000 milliwatts | 160000 milliwatts | 160000 milliwatts | 160000 milliwatts |
