N-channel 950 V, 0.65 Ohm typ., 8 A MDmesh K5 Power MOSFET in a TO-247 package Product overview: STW10N95K5 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 950 V, 0.65 Ohm, 8 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 950 V, 0.65 Ohm, 8 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STW10N95K5 can be used for catalog matching and distributor lookup.
Manufacturer: STMicroelectronics
Win Source Part Number: 1262334-STW10N95K5
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-247-3
Power Dissipation (Maximum): 130W
Alternative Parts (Cross-Reference): IXFH15N60; STW10NK60Z; STW13NK60Z;
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 30
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 950V
Id - Continuous Drain Current: 8A
Rds On (Maximum) at Id, Vgs: 800mOhm at 4A, 10V
Gate Source Voltage(th) (Maximum) at Id: 5V at 100μA
Gate Charge (Qg) (Maximum) at Vgs: 22nC at 10V
Gate Source Voltage (Maximum): ±30V
Input Capacitance (Ciss) (Maximum) at Vds: 630pF at 100V
N-Channel 950V 8A (Tc) 130W (Tc) Through Hole TO-247-3
MOSFET N-CH 950V 8A TO247
MOSFET N-CH 950V 8A TO247
MOSFET, N-CH, 950V, 8A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:950V; Continuous Drain Current Id:8A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Qualification:- RoHS Compliant: Yes
MOSFET N-Ch 950V .65Ohm typ 8A Zener-protected
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-STW10N95K5 | 1262334-STW10N95K5 | 497-14579-5-ND | STW10N95K5 | STW10N95K5 | 45AC7775 | STW10N95K5 |
| Product Name | N-Channel 950 V 0.65 Ohm 8 A MOSFET Transistor | Electronic Wholesale - STW10N95K5 | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 950V, 8A, To-247; Channel Type Stmicroelectronics | MOSFET |
| PD | 130000 milliwatts | 130000 milliwatts | 130000 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | ||||
| V(BR)DSS | 950 volts | 950 volts |
