STMicroelectronics, Inc. Single FETs, MOSFETs STV160NF02LT4

Description
N-Channel 20V 160A (Tc) 210W (Tc) Surface Mount 10-PowerSO
Request a Quote Datasheet
Description
N-Channel 20V 160A (Tc) 210W (Tc) Surface Mount 10-PowerSO
Request a Quote Datasheet

Suppliers

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Product
Description
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Single FETs, MOSFETs - 497-3251-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-3251-2-ND
Single FETs, MOSFETs 497-3251-2-ND
N-Channel 20V 160A (Tc) 210W (Tc) Surface Mount 10-PowerSO

N-Channel 20V 160A (Tc) 210W (Tc) Surface Mount 10-PowerSO

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STV160NF02LT4 - 122740-STV160NF02LT4 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STV160NF02LT4
122740-STV160NF02LT4
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STV160NF02LT4 122740-STV160NF02LT4
Manufacturer: STMicroelectronics Win Source Part Number: 122740-STV160NF02LT4 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 210W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: 175°C (TJ) Case / Package: 10-PowerSO Dimension: PowerSO-10 Exposed Bottom Pad Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 160A (Tc) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 160nC @ 10V Max Input Capacitance: 4800pF @ 15V Maximum Gate-Source Voltage: ±15V Maximum Rds On at Id,Vgs: 2.5 mOhm @ 80A, 10V Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 122740-STV160NF02LT4
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 210W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: 175°C (TJ)
Case / Package: 10-PowerSO
Dimension: PowerSO-10 Exposed Bottom Pad
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 160A (Tc)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 160nC @ 10V
Max Input Capacitance: 4800pF @ 15V
Maximum Gate-Source Voltage: ±15V
Maximum Rds On at Id,Vgs: 2.5 mOhm @ 80A, 10V
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STV160NF02LT4 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STV160NF02LT4
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STV160NF02LT4
MOSFET N-CH 20V 160A 10POWERSO

MOSFET N-CH 20V 160A 10POWERSO

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 497-3251-2-ND 122740-STV160NF02LT4 STV160NF02LT4
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STV160NF02LT4 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type PowerSO-10 Exposed Bottom Pad SOT3; 10-PowerSO PowerSO-10 Exposed Bottom Pad
V(BR)DSS 20 volts
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