STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STU95N3LLH6 STU95N3LLH6

Description
Manufacturer: STMicroelectronics Win Source Part Number: 1104009-STU95N3LLH6 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 70W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: 175°C (TJ) Case / Package: I-Pak Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 20nC @ 4.5V Max Input Capacitance: 2200pF @ 25V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 4.7 mOhm @ 40A, 10V Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Balance Quantity per package: 75
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 1104009-STU95N3LLH6 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 70W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: 175°C (TJ) Case / Package: I-Pak Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 20nC @ 4.5V Max Input Capacitance: 2200pF @ 25V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 4.7 mOhm @ 40A, 10V Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Balance Quantity per package: 75
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - STU95N3LLH6 - 1104009-STU95N3LLH6 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STU95N3LLH6
1104009-STU95N3LLH6
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STU95N3LLH6 1104009-STU95N3LLH6
Manufacturer: STMicroelectronics Win Source Part Number: 1104009-STU95N3LLH6 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 70W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: 175°C (TJ) Case / Package: I-Pak Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 20nC @ 4.5V Max Input Capacitance: 2200pF @ 25V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 4.7 mOhm @ 40A, 10V Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Balance Quantity per package: 75

Manufacturer: STMicroelectronics
Win Source Part Number: 1104009-STU95N3LLH6
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 70W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: 175°C (TJ)
Case / Package: I-Pak
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 80A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 20nC @ 4.5V
Max Input Capacitance: 2200pF @ 25V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 4.7 mOhm @ 40A, 10V
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Balance
Quantity per package: 75

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1104009-STU95N3LLH6
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STU95N3LLH6
Polarity N-Channel; N-Channel
V(BR)DSS 30 volts
PD 70000 milliwatts
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