STMicroelectronics, Inc. Single FETs, MOSFETs STU95N2LH5

Description
N-Channel 25V 80A (Tc) 70W (Tc) Through Hole TO-251 (IPAK)
Request a Quote Datasheet
Description
N-Channel 25V 80A (Tc) 70W (Tc) Through Hole TO-251 (IPAK)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 497-12703-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-12703-5-ND
Single FETs, MOSFETs 497-12703-5-ND
N-Channel 25V 80A (Tc) 70W (Tc) Through Hole TO-251 (IPAK)

N-Channel 25V 80A (Tc) 70W (Tc) Through Hole TO-251 (IPAK)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STU95N2LH5 - 212423-STU95N2LH5 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STU95N2LH5
212423-STU95N2LH5
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STU95N2LH5 212423-STU95N2LH5
Manufacturer: STMicroelectronics Win Source Part Number: 212423-STU95N2LH5 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 70W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: I-Pak Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 25V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 13.4nC @ 5V Max Input Capacitance: 1817pF @ 25V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 4.9 mOhm @ 40A, 10V Alternative Parts (Cross-Reference): IPP04N03LA; IPP042N03L G; Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 212423-STU95N2LH5
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 70W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: I-Pak
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 80A (Tc)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 13.4nC @ 5V
Max Input Capacitance: 1817pF @ 25V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 4.9 mOhm @ 40A, 10V
Alternative Parts (Cross-Reference): IPP04N03LA; IPP042N03L G;
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STU95N2LH5 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STU95N2LH5
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STU95N2LH5
MOSFET N-CH 25V 80A IPAK

MOSFET N-CH 25V 80A IPAK

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 497-12703-5-ND 212423-STU95N2LH5 STU95N2LH5
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STU95N2LH5 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-251-3 Short Leads, IPAK, TO-251AA SOT3; I-Pak TO-251-3 Short Leads, IPak, TO-251AA
V(BR)DSS 25 volts
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