MOSFET N-CH 650V 7A IPAK
N-Channel 650V 7A (Tc) 70W (Tc) Through Hole TO-251 (IPAK)
Manufacturer: STMicroelectronics
Win Source Part Number: 212422-STU8N65M5
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 70W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: I-Pak
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 7A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 15nC @ 10V
Max Input Capacitance: 690pF @ 100V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 600 mOhm @ 3.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Balance
MOSFET N-CH 650V 7A IPAK
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | STU8N65M5 | 497-11365-5-ND | 212422-STU8N65M5 | STU8N65M5 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STU8N65M5 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | |
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||
| V(BR)DSS | 650 volts | 650 volts | ||
| IDSS | 7000 milliamps |
