STMicroelectronics, Inc. Single FETs, MOSFETs STU7NM60N

Description
N-Channel 600V 5A (Tc) 45W (Tc) Through Hole TO-251 (IPAK)
Request a Quote Datasheet
Description
N-Channel 600V 5A (Tc) 45W (Tc) Through Hole TO-251 (IPAK)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 497-12367-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-12367-ND
Single FETs, MOSFETs 497-12367-ND
N-Channel 600V 5A (Tc) 45W (Tc) Through Hole TO-251 (IPAK)

N-Channel 600V 5A (Tc) 45W (Tc) Through Hole TO-251 (IPAK)

Buy Now Datasheet
Single FETs, MOSFETs - STU7NM60N - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STU7NM60N
Single FETs, MOSFETs STU7NM60N
MOSFET N-CH 600V 5A IPAK

MOSFET N-CH 600V 5A IPAK

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STU7NM60N - 037393-STU7NM60N - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STU7NM60N
037393-STU7NM60N
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STU7NM60N 037393-STU7NM60N
Manufacturer: STMicroelectronics Win Source Part Number: 037393-STU7NM60N Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 45W (Tc) Family Name: STU7NM60N Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: I-Pak Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 5A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 14nC @ 10V Max Input Capacitance: 363pF @ 50V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 900 mOhm @ 2.5A, 10V Alternative Parts (Cross-Reference): MMIS60R900PTH; AOU4S60; TK5Q65W,S1Q; TK5Q65W; Introduction Date: October 22, 2009 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2029 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Sufficient

Manufacturer: STMicroelectronics
Win Source Part Number: 037393-STU7NM60N
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 45W (Tc)
Family Name: STU7NM60N
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: I-Pak
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 5A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 14nC @ 10V
Max Input Capacitance: 363pF @ 50V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 900 mOhm @ 2.5A, 10V
Alternative Parts (Cross-Reference): MMIS60R900PTH; AOU4S60; TK5Q65W,S1Q; TK5Q65W;
Introduction Date: October 22, 2009
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2029
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET N-Ch 600V 0.84 Ohm 5A 2nd Gen MDmesh

MOSFET N-Ch 600V 0.84 Ohm 5A 2nd Gen MDmesh

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STU7NM60N - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STU7NM60N
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STU7NM60N
MOSFET N-CH 600V 5A IPAK

MOSFET N-CH 600V 5A IPAK

Supplier's Site
Mosfet, N Ch, 600V, 5A, To-251; Channel Type Stmicroelectronics - 87T3911 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Ch, 600V, 5A, To-251; Channel Type Stmicroelectronics
87T3911
Mosfet, N Ch, 600V, 5A, To-251; Channel Type Stmicroelectronics 87T3911
MOSFET, N CH, 600V, 5A, TO-251; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Product Range:- RoHS Compliant: Yes

MOSFET, N CH, 600V, 5A, TO-251; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Product Range:- RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  DigiKey ODG (Origin Data Global) Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 497-12367-ND STU7NM60N 037393-STU7NM60N STU7NM60N STU7NM60N 87T3911
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STU7NM60N MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N Ch, 600V, 5A, To-251; Channel Type Stmicroelectronics
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel
Package Type TO-251-3 Short Leads, IPAK, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA SOT3; I-Pak TO-251-3 Short Leads, IPak, TO-251AA TO-3
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 600 volts 600 volts
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