STMicroelectronics, Inc. Through-Hole 600V 5A MOSFET Transistor STU7NM60N

600V 5A N-CH Power MOSFET IPAK Through Hole Product overview: STU7NM60N from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Through-Hole, 600V, 5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Through-Hole, 600V, 5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STU7NM60N can be used for catalog matching and distributor lookup.

MOSFET N-CH 600V 5A IPAK

Manufacturer: STMicroelectronics
Win Source Part Number: 037393-STU7NM60N
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 45W (Tc)
Family Name: STU7NM60N
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: I-Pak
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 5A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 14nC @ 10V
Max Input Capacitance: 363pF @ 50V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 900 mOhm @ 2.5A, 10V
Alternative Parts (Cross-Reference): MMIS60R900PTH; AOU4S60; TK5Q65W,S1Q; TK5Q65W;
Introduction Date: October 22, 2009
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2029
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Sufficient

N-Channel 600V 5A (Tc) 45W (Tc) Through Hole TO-251 (IPAK)