STMicroelectronics, Inc. Single FETs, MOSFETs STU7NM60N

Description
N-Channel 600V 5A (Tc) 45W (Tc) Through Hole TO-251 (IPAK)
Request a Quote Datasheet
Description
N-Channel 600V 5A (Tc) 45W (Tc) Through Hole TO-251 (IPAK)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 497-12367-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-12367-ND
Single FETs, MOSFETs 497-12367-ND
N-Channel 600V 5A (Tc) 45W (Tc) Through Hole TO-251 (IPAK)

N-Channel 600V 5A (Tc) 45W (Tc) Through Hole TO-251 (IPAK)

Buy Now Datasheet
Single FETs, MOSFETs - STU7NM60N - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STU7NM60N
Single FETs, MOSFETs STU7NM60N
MOSFET N-CH 600V 5A IPAK

MOSFET N-CH 600V 5A IPAK

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STU7NM60N - 037393-STU7NM60N - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STU7NM60N
037393-STU7NM60N
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STU7NM60N 037393-STU7NM60N
Manufacturer: STMicroelectronics Win Source Part Number: 037393-STU7NM60N Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 45W (Tc) Family Name: STU7NM60N Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: I-Pak Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 5A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 14nC @ 10V Max Input Capacitance: 363pF @ 50V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 900 mOhm @ 2.5A, 10V Alternative Parts (Cross-Reference): MMIS60R900PTH; AOU4S60; TK5Q65W,S1Q; TK5Q65W; Introduction Date: October 22, 2009 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2029 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Sufficient

Manufacturer: STMicroelectronics
Win Source Part Number: 037393-STU7NM60N
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 45W (Tc)
Family Name: STU7NM60N
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: I-Pak
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 5A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 14nC @ 10V
Max Input Capacitance: 363pF @ 50V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 900 mOhm @ 2.5A, 10V
Alternative Parts (Cross-Reference): MMIS60R900PTH; AOU4S60; TK5Q65W,S1Q; TK5Q65W;
Introduction Date: October 22, 2009
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2029
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET N-Ch 600V 0.84 Ohm 5A 2nd Gen MDmesh

MOSFET N-Ch 600V 0.84 Ohm 5A 2nd Gen MDmesh

Buy Now Datasheet
Mosfet, N Ch, 600V, 5A, To-251; Channel Type Stmicroelectronics - 87T3911 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Ch, 600V, 5A, To-251; Channel Type Stmicroelectronics
87T3911
Mosfet, N Ch, 600V, 5A, To-251; Channel Type Stmicroelectronics 87T3911
MOSFET, N CH, 600V, 5A, TO-251; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Product Range:- RoHS Compliant: Yes

MOSFET, N CH, 600V, 5A, TO-251; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Product Range:- RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STU7NM60N - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STU7NM60N
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STU7NM60N
MOSFET N-CH 600V 5A IPAK

MOSFET N-CH 600V 5A IPAK

Supplier's Site

Technical Specifications

  DigiKey ODG (Origin Data Global) Win Source Electronics VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 497-12367-ND STU7NM60N 037393-STU7NM60N STU7NM60N 87T3911 STU7NM60N
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STU7NM60N MOSFET Mosfet, N Ch, 600V, 5A, To-251; Channel Type Stmicroelectronics Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel
Package Type TO-251-3 Short Leads, IPAK, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA SOT3; I-Pak TO-3 TO-251-3 Short Leads, IPak, TO-251AA
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 600 volts 600 volts
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