STMicroelectronics, Inc. Single FETs, MOSFETs STU7N80K5

Description
N-Channel 800V 6A (Tc) 110W (Tc) Through Hole TO-251 (IPAK)
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Description
N-Channel 800V 6A (Tc) 110W (Tc) Through Hole TO-251 (IPAK)
Request a Quote Datasheet

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Description
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Single FETs, MOSFETs - 497-13656-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-13656-5-ND
Single FETs, MOSFETs 497-13656-5-ND
N-Channel 800V 6A (Tc) 110W (Tc) Through Hole TO-251 (IPAK)

N-Channel 800V 6A (Tc) 110W (Tc) Through Hole TO-251 (IPAK)

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - STU7N80K5 - 212420-STU7N80K5 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STU7N80K5
212420-STU7N80K5
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STU7N80K5 212420-STU7N80K5
Manufacturer: STMicroelectronics Win Source Part Number: 212420-STU7N80K5 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 110W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: I-Pak Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 6A (Tc) Gate-Source Threshold Voltage: 5V @ 100μA Max Gate Charge: 13.4nC @ 10V Max Input Capacitance: 360pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.2 Ohm @ 3A, 10V Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 212420-STU7N80K5
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 110W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: I-Pak
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 6A (Tc)
Gate-Source Threshold Voltage: 5V @ 100μA
Max Gate Charge: 13.4nC @ 10V
Max Input Capacitance: 360pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.2 Ohm @ 3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Limited

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Sheung Wan, Hong Kong
MOSFET N-Ch 800 V 0.95 Ohm 6 A Zener-protecte

MOSFET N-Ch 800 V 0.95 Ohm 6 A Zener-protecte

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STU7N80K5 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STU7N80K5
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STU7N80K5
MOSFET N-CH 800V 6A IPAK

MOSFET N-CH 800V 6A IPAK

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 497-13656-5-ND 212420-STU7N80K5 STU7N80K5 STU7N80K5
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STU7N80K5 MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-251-3 Short Leads, IPAK, TO-251AA SOT3; I-Pak TO-251-3 Short Leads, IPak, TO-251AA
V(BR)DSS 800 volts
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