STMicroelectronics Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single STU6N60DM2

Description
Win Source Part Number: 1278115-STU6N60DM2 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: MDmesh™ DM2 Package: Tube Standard Package: 3,000 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 1.1Ohm @ 2.5A, 10V Vgs(th) (Max) @ Id: 4.75V @ 250µA Power Dissipation (Max): 60W (Tc) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Supplier Device Package: I-PAK Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 274 pF @ 100 V Vgs (Max): ±25V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 57 pct. REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: STMicroelectronics Base Product Number: STU6N60 Drive Voltage (Max Rds On, Min Rds On): 10V
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Description
Win Source Part Number: 1278115-STU6N60DM2 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: MDmesh™ DM2 Package: Tube Standard Package: 3,000 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 1.1Ohm @ 2.5A, 10V Vgs(th) (Max) @ Id: 4.75V @ 250µA Power Dissipation (Max): 60W (Tc) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Supplier Device Package: I-PAK Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 274 pF @ 100 V Vgs (Max): ±25V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 57 pct. REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: STMicroelectronics Base Product Number: STU6N60 Drive Voltage (Max Rds On, Min Rds On): 10V
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Suppliers

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1278115-STU6N60DM2 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1278115-STU6N60DM2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1278115-STU6N60DM2
Win Source Part Number: 1278115-STU6N60DM2 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: MDmesh™ DM2 Package: Tube Standard Package: 3,000 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 1.1Ohm @ 2.5A, 10V Vgs(th) (Max) @ Id: 4.75V @ 250µA Power Dissipation (Max): 60W (Tc) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Supplier Device Package: I-PAK Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 274 pF @ 100 V Vgs (Max): ±25V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 57 pct. REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: STMicroelectronics Base Product Number: STU6N60 Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1278115-STU6N60DM2
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: MDmesh™ DM2
Package: Tube
Standard Package: 3,000
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Power Dissipation (Max): 60W (Tc)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: I-PAK
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 274 pF @ 100 V
Vgs (Max): ±25V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 57 pct.
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Base Product Number: STU6N60
Drive Voltage (Max Rds On, Min Rds On): 10V

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Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STU6N60DM2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STU6N60DM2
MOSFET N-CH 600V 5A IPAK

MOSFET N-CH 600V 5A IPAK

Supplier's Site
Sheung Wan, Hong Kong
MOSFET

MOSFET

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Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1278115-STU6N60DM2 STU6N60DM2 STU6N60DM2
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel
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