N-Channel 950V 4A (Tc) 90W (Tc) Through Hole TO-251 (IPAK)
N-Ch MOSFET 950V 4A 3R IPAK Through Hole Product overview: STU5N95K3 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Through-Hole, 950V, 4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Through-Hole, 950V, 4A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STU5N95K3 can be used for catalog matching and distributor lookup.
Manufacturer: STMicroelectronics
Win Source Part Number: 1104004-STU5N95K3
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 90W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: I-Pak
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 950V
Continuous Drain Current at 25°C: 4A (Tc)
Gate-Source Threshold Voltage: 5V @ 100μA
Max Gate Charge: 19nC @ 10V
Max Input Capacitance: 460pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 3.5 Ohm @ 2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Sufficient
MOSFET, N CH, 950V, 4A, TO-251; Channel Type:N Channel; Drain Source Voltage Vds:950V; Continuous Drain Current Id:4A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Product Range:- RoHS Compliant: Yes
MOSFET N-CH 950V 4A IPAK
MOSFET N-CH 950V 4A IPAK
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Newark, An Avnet Company | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 497-12696-5-ND | 278-STU5N95K3 | 1104004-STU5N95K3 | 71R7083 | STU5N95K3 | STU5N95K3 |
| Product Name | Single FETs, MOSFETs | Through-Hole 950V 4A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STU5N95K3 | Mosfet, N Ch, 950V, 4A, To-251; Channel Type Stmicroelectronics | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | ||
| Package Type | TO-251-3 Short Leads, IPAK, TO-251AA | SOT3; I-Pak | TO-3 | TO-251-3 Short Leads, IPak, TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA | |
| PD | 90000 milliwatts | 90000 milliwatts | 90000 milliwatts | |||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
