STMicroelectronics, Inc. Single FETs, MOSFETs STU5N62K3

Description
N-Channel 620V 4.2A (Tc) 70W (Tc) Through Hole TO-251 (IPAK)
  • Single FETs, MOSFETs - 497-12366-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - STU5N62K3 - 1104003-STU5N62K3 - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STU5N62K3 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N Ch, 620V, 4.2A, To-251; Channel Type Stmicroelectronics - 87T3910 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
N-Channel 620V 4.2A (Tc) 70W (Tc) Through Hole TO-251 (IPAK)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 497-12366-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-12366-ND
Single FETs, MOSFETs 497-12366-ND
N-Channel 620V 4.2A (Tc) 70W (Tc) Through Hole TO-251 (IPAK)

N-Channel 620V 4.2A (Tc) 70W (Tc) Through Hole TO-251 (IPAK)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STU5N62K3 - 1104003-STU5N62K3 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STU5N62K3
1104003-STU5N62K3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STU5N62K3 1104003-STU5N62K3
Manufacturer: STMicroelectronics Win Source Part Number: 1104003-STU5N62K3 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 70W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: I-Pak Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 620V Continuous Drain Current at 25°C: 4.2A (Tc) Gate-Source Threshold Voltage: 4.5V @ 50μA Max Gate Charge: 26nC @ 10V Max Input Capacitance: 680pF @ 50V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.6 Ohm @ 2.1A, 10V Alternative Parts (Cross-Reference): FDU7N60NZTU; TSM6N60CH C5G; AOI4C60; Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 1104003-STU5N62K3
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 70W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: I-Pak
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 620V
Continuous Drain Current at 25°C: 4.2A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 50μA
Max Gate Charge: 26nC @ 10V
Max Input Capacitance: 680pF @ 50V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.6 Ohm @ 2.1A, 10V
Alternative Parts (Cross-Reference): FDU7N60NZTU; TSM6N60CH C5G; AOI4C60;
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
STU5N62K3
MOSFET STU5N62K3
MOSFET N-Ch 620V 1.28 Ohm 4.2A SuperMESH 3

MOSFET N-Ch 620V 1.28 Ohm 4.2A SuperMESH 3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STU5N62K3 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STU5N62K3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STU5N62K3
MOSFET N-CH 620V 4.2A IPAK

MOSFET N-CH 620V 4.2A IPAK

Supplier's Site
Mosfet, N Ch, 620V, 4.2A, To-251; Channel Type Stmicroelectronics - 87T3910 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Ch, 620V, 4.2A, To-251; Channel Type Stmicroelectronics
87T3910
Mosfet, N Ch, 620V, 4.2A, To-251; Channel Type Stmicroelectronics 87T3910
MOSFET, N CH, 620V, 4.2A, TO-251; Channel Type:N Channel; Drain Source Voltage Vds:620V; Continuous Drain Current Id:4.2A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; MSL:- RoHS Compliant: Yes

MOSFET, N CH, 620V, 4.2A, TO-251; Channel Type:N Channel; Drain Source Voltage Vds:620V; Continuous Drain Current Id:4.2A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; MSL:- RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 497-12366-ND 1104003-STU5N62K3 STU5N62K3 STU5N62K3 87T3910
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STU5N62K3 MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N Ch, 620V, 4.2A, To-251; Channel Type Stmicroelectronics
Polarity N-Channel N-Channel; N-Channel
Package Type TO-251-3 Short Leads, IPAK, TO-251AA SOT3; I-Pak TO-251 (IPAK) TO-3
V(BR)DSS 620 volts
PD 70000 milliwatts
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