STMicroelectronics, Inc. Single FETs, MOSFETs STU5N52K3

Description
N-Channel 525V 4.4A (Tc) 70W (Tc) Through Hole TO-251 (IPAK)
Request a Quote Datasheet
Description
N-Channel 525V 4.4A (Tc) 70W (Tc) Through Hole TO-251 (IPAK)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 497-12365-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-12365-ND
Single FETs, MOSFETs 497-12365-ND
N-Channel 525V 4.4A (Tc) 70W (Tc) Through Hole TO-251 (IPAK)

N-Channel 525V 4.4A (Tc) 70W (Tc) Through Hole TO-251 (IPAK)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STU5N52K3 - 1104001-STU5N52K3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STU5N52K3
1104001-STU5N52K3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STU5N52K3 1104001-STU5N52K3
Manufacturer: STMicroelectronics Win Source Part Number: 1104001-STU5N52K3 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 70W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: I-Pak Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 525V Continuous Drain Current at 25°C: 4.4A (Tc) Gate-Source Threshold Voltage: 4.5V @ 50μA Max Gate Charge: 17nC @ 10V Max Input Capacitance: 545pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.5 Ohm @ 2.2A, 10V Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 1104001-STU5N52K3
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 70W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: I-Pak
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 525V
Continuous Drain Current at 25°C: 4.4A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 50μA
Max Gate Charge: 17nC @ 10V
Max Input Capacitance: 545pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.5 Ohm @ 2.2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STU5N52K3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STU5N52K3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STU5N52K3
MOSFET N-CH 525V 4.4A IPAK

MOSFET N-CH 525V 4.4A IPAK

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-Ch 525V 1.2 Ohm 4.4A SuperMESH 3

MOSFET N-Ch 525V 1.2 Ohm 4.4A SuperMESH 3

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 497-12365-ND 1104001-STU5N52K3 STU5N52K3 STU5N52K3
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STU5N52K3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel; N-Channel
Package Type TO-251-3 Short Leads, IPAK, TO-251AA SOT3; I-Pak TO-251-3 Short Leads, IPak, TO-251AA
V(BR)DSS 525 volts
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