STMicroelectronics, Inc. Single FETs, MOSFETs STU3N80K5

N-Channel 800V 2.5A (Tc) 60W (Tc) Through Hole TO-251 (IPAK)

800V N-CH MOSFET, 2.5A, 3.5 Ohm, IPAK Product overview: STU3N80K5 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 800V, 2.5A, 3.5 Ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, 2.5A, 3.5 Ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STU3N80K5 can be used for catalog matching and distributor lookup.

Manufacturer: STMicroelectronics
Win Source Part Number: 1262254-STU3N80K5
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: I-PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-251-3 Short Leads, IPak, TO-251AA
Power Dissipation (Maximum): 60W
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 75
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 800V
Id - Continuous Drain Current: 2.5A
Rds On (Maximum) at Id, Vgs: 3.5Ohm at 1A, 10V
Gate Source Voltage(th) (Maximum) at Id: 5V at 100μA
Gate Charge (Qg) (Maximum) at Vgs: 9.5nC at 10V
Gate Source Voltage (Maximum): 30V
Input Capacitance (Ciss) (Maximum) at Vds: 130pF at 100V