N-Channel 800V 2A (Tc) 45W (Tc) Through Hole TO-251 (IPAK)
N-channel 800 V, 3.5 Ohm typ., 2 A MDmesh K5 Power MOSFET in an IPAK package Product overview: STU2N80K5 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 800 V, 3.5 Ohm, 2 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800 V, 3.5 Ohm, 2 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STU2N80K5 can be used for catalog matching and distributor lookup.
MOSFET N-CH 800V 2A IPAK
Manufacturer: STMicroelectronics
Win Source Part Number: 1103999-STU2N80K5
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 45W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: IPAK (TO-251)
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 2A (Tc)
Gate-Source Threshold Voltage: 5V @ 100μA
Max Gate Charge: 9.5nC @ 10V
Max Input Capacitance: 105pF @ 100V
Maximum Gate-Source Voltage: 30V
Maximum Rds On at Id,Vgs: 4.5 Ohm @ 1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Limited
MOSFET N-CH 800V 2A IPAK
MOSFET N-channel 800 V, 3.5 Ohm typ., 2 A MDmesh K5 Power MOSFET in IPAK package
MOSFET, N-CH, 800V, 2A, TO-251; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:2A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Qualification:- RoHS Compliant: Yes
| DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 497-15022-5-ND | 278-STU2N80K5 | STU2N80K5 | 1103999-STU2N80K5 | STU2N80K5 | STU2N80K5 | 45AC7771 |
| Product Name | Single FETs, MOSFETs | N-Channel 800 V 3.5 Ohm 2 A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STU2N80K5 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 800V, 2A, To-251; Channel Type Stmicroelectronics |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | ||||
| Package Type | TO-251-3 Short Leads, IPAK, TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA | SOT3; IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA | TO-3 | ||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
