STMicroelectronics, Inc. Single FETs, MOSFETs STU13N60M2

Description
N-Channel 600V 11A (Tc) 110W (Tc) Through Hole TO-251 (IPAK)
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Description
N-Channel 600V 11A (Tc) 110W (Tc) Through Hole TO-251 (IPAK)
Request a Quote Datasheet

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Single FETs, MOSFETs - 497-13885-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-13885-5-ND
Single FETs, MOSFETs 497-13885-5-ND
N-Channel 600V 11A (Tc) 110W (Tc) Through Hole TO-251 (IPAK)

N-Channel 600V 11A (Tc) 110W (Tc) Through Hole TO-251 (IPAK)

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1014368-STU13N60M2 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1014368-STU13N60M2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1014368-STU13N60M2
Win Source Part Number: 1014368-STU13N60M2 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: MDmesh™ II Plus Package: Tube Standard Package: 75 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 110W (Tc) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Supplier Device Package: TO-251 (IPAK) Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 100 V Vgs (Max): ±25V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 67 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: STMicroelectronics Other Names: -497-13885-5,497-138 85-5 Base Product Number: STU13 Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1014368-STU13N60M2
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: MDmesh™ II Plus
Package: Tube
Standard Package: 75
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 110W (Tc)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: TO-251 (IPAK)
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 100 V
Vgs (Max): ±25V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 67 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: -497-13885-5,497-13885-5
Base Product Number: STU13
Drive Voltage (Max Rds On, Min Rds On): 10V

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Sheung Wan, Hong Kong
MOSFET N-CH 600V 0.35Ohm 11A Mdmesh M2

MOSFET N-CH 600V 0.35Ohm 11A Mdmesh M2

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STU13N60M2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STU13N60M2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STU13N60M2
MOSFET N-CH 600V 11A IPAK

MOSFET N-CH 600V 11A IPAK

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 497-13885-5-ND 1014368-STU13N60M2 STU13N60M2 STU13N60M2
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
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