STMicroelectronics, Inc. Single FETs, MOSFETs STU12N60M2

N-Channel 600V 9A (Tc) 85W (Tc) Through Hole TO-251 (IPAK)

Manufacturer: STMicroelectronics
Win Source Part Number: 1001386-STU12N60M2
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 85W (Tc)
Family Name: STU12N60M2
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: I-Pak
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 9A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 16nC @ 10V
Max Input Capacitance: 538pF @ 100V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 450 mOhm @ 4.5A, 10V
Alternative Parts (Cross-Reference): SiHU6N65E-GE3; IPU60R600CS; IPS65R600E6AKMA1; IPS60R400CEAKMA1;
Introduction Date: May 22, 2015
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: Obsolete / End of life
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Balance

N-channel 600 V, 0.395 Ohm typ., 9 A MDmesh M2 Power MOSFET in IPAK package Product overview: STU12N60M2 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600 V, 0.395 Ohm, 9 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600 V, 0.395 Ohm, 9 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STU12N60M2 can be used for catalog matching and distributor lookup.