Win Source Part Number: 1278129-STU11NM60ND
Category: Discrete Semiconductor Products>Transistors
Series: FDmesh™ II
Package: Tube
Standard Package: 75
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 90W (Tc)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: I-PAK
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V
Vgs (Max): ±25V
Temperature Range - Operating: 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 66 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Base Product Number: STU11N
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
N-Channel 600V 10A (Tc) 90W (Tc) Through Hole I-PAK
MOSFET N-CH 600V 10A IPAK
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Transistors | Transistors | RF Transistors |
| Product Number | 1278129-STU11NM60ND | STU11NM60ND-ND | STU11NM60ND |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel |
