STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STT6N3LLH6 STT6N3LLH6

Description
Manufacturer: STMicroelectronics Win Source Part Number: 1103899-STT6N3LLH6 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.6W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-23-6 Dimension: SOT-23-6 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 6A (Tc) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 3.6nC @ 4.5V Max Input Capacitance: 283pF @ 24V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 25 mOhm @ 3A, 10V Alternative Parts (Cross-Reference): FDC655BN; DMG6402LDM-7; DMN3033LDM; Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - STT6N3LLH6 - 1103899-STT6N3LLH6 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - 497-13591-6-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 497-13591-1-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 497-13591-2-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - STT6N3LLH6 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STT6N3LLH6 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N-Ch, 30V, 6A, 1.6W, Sot-23; Transistor Polarity Stmicroelectronics - 07AH7134 - Newark, An Avnet Company
    Newark, An Avnet Company
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 1103899-STT6N3LLH6 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.6W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-23-6 Dimension: SOT-23-6 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 6A (Tc) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 3.6nC @ 4.5V Max Input Capacitance: 283pF @ 24V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 25 mOhm @ 3A, 10V Alternative Parts (Cross-Reference): FDC655BN; DMG6402LDM-7; DMN3033LDM; Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STT6N3LLH6 - 1103899-STT6N3LLH6 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STT6N3LLH6
1103899-STT6N3LLH6
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STT6N3LLH6 1103899-STT6N3LLH6
Manufacturer: STMicroelectronics Win Source Part Number: 1103899-STT6N3LLH6 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.6W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-23-6 Dimension: SOT-23-6 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 6A (Tc) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 3.6nC @ 4.5V Max Input Capacitance: 283pF @ 24V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 25 mOhm @ 3A, 10V Alternative Parts (Cross-Reference): FDC655BN; DMG6402LDM-7; DMN3033LDM; Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 1103899-STT6N3LLH6
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.6W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: SOT-23-6
Dimension: SOT-23-6
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 6A (Tc)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 3.6nC @ 4.5V
Max Input Capacitance: 283pF @ 24V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 25 mOhm @ 3A, 10V
Alternative Parts (Cross-Reference): FDC655BN; DMG6402LDM-7; DMN3033LDM;
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - 497-13591-6-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-13591-6-ND
Single FETs, MOSFETs 497-13591-6-ND
N-Channel 30V 6A (Tc) 1.6W (Tc) Surface Mount SOT-23-6

N-Channel 30V 6A (Tc) 1.6W (Tc) Surface Mount SOT-23-6

Buy Now Datasheet
Single FETs, MOSFETs - 497-13591-1-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-13591-1-ND
Single FETs, MOSFETs 497-13591-1-ND
N-Channel 30V 6A (Tc) 1.6W (Tc) Surface Mount SOT-23-6

N-Channel 30V 6A (Tc) 1.6W (Tc) Surface Mount SOT-23-6

Buy Now Datasheet
Single FETs, MOSFETs - 497-13591-2-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-13591-2-ND
Single FETs, MOSFETs 497-13591-2-ND
N-Channel 30V 6A (Tc) 1.6W (Tc) Surface Mount SOT-23-6

N-Channel 30V 6A (Tc) 1.6W (Tc) Surface Mount SOT-23-6

Buy Now Datasheet
Single FETs, MOSFETs - STT6N3LLH6 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STT6N3LLH6
Single FETs, MOSFETs STT6N3LLH6
MOSFET N-CH 30V 6A SOT23-6

MOSFET N-CH 30V 6A SOT23-6

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STT6N3LLH6 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STT6N3LLH6
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STT6N3LLH6
MOSFET N-CH 30V 6A SOT23-6

MOSFET N-CH 30V 6A SOT23-6

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
STT6N3LLH6
MOSFET STT6N3LLH6
MOSFET N-Ch 30V .025Ohm 6A STripFET VI

MOSFET N-Ch 30V .025Ohm 6A STripFET VI

Buy Now Datasheet
Mosfet, N-Ch, 30V, 6A, 1.6W, Sot-23; Transistor Polarity Stmicroelectronics - 07AH7134 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 30V, 6A, 1.6W, Sot-23; Transistor Polarity Stmicroelectronics
07AH7134
Mosfet, N-Ch, 30V, 6A, 1.6W, Sot-23; Transistor Polarity Stmicroelectronics 07AH7134
MOSFET, N-CH, 30V, 6A, 1.6W, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.021ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; Power RoHS Compliant: Yes

MOSFET, N-CH, 30V, 6A, 1.6W, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.021ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; Power RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1103899-STT6N3LLH6 497-13591-6-ND STT6N3LLH6 STT6N3LLH6 STT6N3LLH6 07AH7134
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STT6N3LLH6 Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Mosfet, N-Ch, 30V, 6A, 1.6W, Sot-23; Transistor Polarity Stmicroelectronics
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 30 volts 30 volts
PD 1600 milliwatts 1600 milliwatts
TJ 150 C (302 F) 150 C (302 F)
Package Type SOT3; SOT23; SOT-23-6 SOT23; SOT-23-6 SOT23; SOT-23-6 SOT23; SOT-23-6 TO-3; SOT23
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