STMicroelectronics, Inc. Single FETs, MOSFETs STSJ100NH3LL

Description
N-Channel 30V 100A (Tc) 3W (Ta), 70W (Tc) Surface Mount 8-SOIC-EP
Request a Quote Datasheet
Description
N-Channel 30V 100A (Tc) 3W (Ta), 70W (Tc) Surface Mount 8-SOIC-EP
Request a Quote Datasheet

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Description
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Single FETs, MOSFETs - 497-5785-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-5785-2-ND
Single FETs, MOSFETs 497-5785-2-ND
N-Channel 30V 100A (Tc) 3W (Ta), 70W (Tc) Surface Mount 8-SOIC-EP

N-Channel 30V 100A (Tc) 3W (Ta), 70W (Tc) Surface Mount 8-SOIC-EP

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STSJ100NH3LL - 1103890-STSJ100NH3LL - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STSJ100NH3LL
1103890-STSJ100NH3LL
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STSJ100NH3LL 1103890-STSJ100NH3LL
Manufacturer: STMicroelectronics Win Source Part Number: 1103890-STSJ100NH3LL Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3W (Ta), 70W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: 8-SOIC-EP Dimension: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 100A (Tc) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 40nC @ 4.5V Max Input Capacitance: 4450pF @ 25V Maximum Gate-Source Voltage: ±16V Maximum Rds On at Id,Vgs: 3.5 mOhm @ 12.5A, 10V Alternative Parts (Cross-Reference): FDS7066N7; Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 1103890-STSJ100NH3LL
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3W (Ta), 70W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: 8-SOIC-EP
Dimension: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 100A (Tc)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 40nC @ 4.5V
Max Input Capacitance: 4450pF @ 25V
Maximum Gate-Source Voltage: ±16V
Maximum Rds On at Id,Vgs: 3.5 mOhm @ 12.5A, 10V
Alternative Parts (Cross-Reference): FDS7066N7;
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STSJ100NH3LL - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STSJ100NH3LL
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STSJ100NH3LL
MOSFET N-CH 30V 100A 8SOIC

MOSFET N-CH 30V 100A 8SOIC

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 497-5785-2-ND 1103890-STSJ100NH3LL STSJ100NH3LL
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STSJ100NH3LL Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type "8-SOIC (0.154"", 3.90mm Width) Exposed Pad" SOT3; 8-SOIC-EP 40 nC @ 4.5 V
V(BR)DSS 30 volts
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