STMicroelectronics, Inc. Single Bipolar Transistors STSA851-AP

Description
Bipolar (BJT) Transistor NPN 60V 5A 130MHz 1.1W Through Hole TO-92AP
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor NPN 60V 5A 130MHz 1.1W Through Hole TO-92AP
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Single Bipolar Transistors - STSA851-AP-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
STSA851-AP-ND
Single Bipolar Transistors STSA851-AP-ND
Bipolar (BJT) Transistor NPN 60V 5A 130MHz 1.1W Through Hole TO-92AP

Bipolar (BJT) Transistor NPN 60V 5A 130MHz 1.1W Through Hole TO-92AP

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - 1278592-STSA851-AP - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single
1278592-STSA851-AP
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single 1278592-STSA851-AP
Win Source Part Number: 1278592-STSA851-AP Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Package: Tape & Box (TB) Standard Package: 2,000 Power - Max: 1.1 W Voltage - Collector Emitter Breakdown (Max): 60 V Current - Collector (Ic) (Max): 5 A Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 450mV @ 200mA, 5A Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2A, 1V Frequency - Transition: 130MHz Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Supplier Device Package: TO-92AP Temperature Range - Operating: 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 58 pct. MSL Level: 3 (168 Hours) REACH Status: REACH Unaffected HTSUS: 8541.29.0075 Mfr: STMicroelectronics Base Product Number: STSA851 Product Status: Obsolete

Win Source Part Number: 1278592-STSA851-AP
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Package: Tape & Box (TB)
Standard Package: 2,000
Power - Max: 1.1 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 5 A
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 450mV @ 200mA, 5A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2A, 1V
Frequency - Transition: 130MHz
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package: TO-92AP
Temperature Range - Operating: 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 58 pct.
MSL Level: 3 (168 Hours)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0075
Mfr: STMicroelectronics
Base Product Number: STSA851
Product Status: Obsolete

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - STSA851-AP - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
STSA851-AP
Discrete Semiconductor Products - Transistors - Bipolar (BJT) STSA851-AP
TRANS NPN 60V 5A TO92AP

TRANS NPN 60V 5A TO92AP

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors
Product Number STSA851-AP-ND 1278592-STSA851-AP STSA851-AP
Product Name Single Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN
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