STMicroelectronics, Inc. Single FETs, MOSFETs STS9P3LLH6

Description
P-Channel 30V 9A (Ta) 2.7W (Ta) Surface Mount 8-SO
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Description
P-Channel 30V 9A (Ta) 2.7W (Ta) Surface Mount 8-SO
Request a Quote Datasheet

Suppliers

Company
Product
Description
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Single FETs, MOSFETs - STS9P3LLH6-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
STS9P3LLH6-ND
Single FETs, MOSFETs STS9P3LLH6-ND
P-Channel 30V 9A (Ta) 2.7W (Ta) Surface Mount 8-SO

P-Channel 30V 9A (Ta) 2.7W (Ta) Surface Mount 8-SO

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FETs - Single - STS9P3LLH6 - 1262058-STS9P3LLH6 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - STS9P3LLH6
1262058-STS9P3LLH6
FETs - Single - STS9P3LLH6 1262058-STS9P3LLH6
Manufacturer: STMicroelectronics Win Source Part Number: 1262058-STS9P3LLH6 Packaging: Tape and Reel Mounting Style: SMD Technology: MOSFET Transistor Polarity: P-Channel Categories: Discrete Semiconductor Products Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.st.com Manufacturer Package: 8-SOIC Power Dissipation (Maximum): 2.7W Alternative Parts (Cross-Reference): SI4435DY-NL; IRF9333TRPbF; IRF9333PbF; Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 2,500 MSL Level: 3 (168 Hours) Vds - Drain-Source Breakdown Voltage: 30V Id - Continuous Drain Current: 9A Rds On (Maximum) at Id, Vgs: 15mOhm at 4.5A, 10V Gate Source Voltage(th) (Maximum) at Id: 2V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 24nC at 4.5V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 2615pF at 25V

Manufacturer: STMicroelectronics
Win Source Part Number: 1262058-STS9P3LLH6
Packaging: Tape and Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: P-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.st.com
Manufacturer Package: 8-SOIC
Power Dissipation (Maximum): 2.7W
Alternative Parts (Cross-Reference): SI4435DY-NL; IRF9333TRPbF; IRF9333PbF;
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 2,500
MSL Level: 3 (168 Hours)
Vds - Drain-Source Breakdown Voltage: 30V
Id - Continuous Drain Current: 9A
Rds On (Maximum) at Id, Vgs: 15mOhm at 4.5A, 10V
Gate Source Voltage(th) (Maximum) at Id: 2V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 24nC at 4.5V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 2615pF at 25V

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Sheung Wan, Hong Kong
MOSFET P-channel -30 V, 12 mOhm typ., -9 A, STripFET H6 Power MOSFET in a SO-8 package

MOSFET P-channel -30 V, 12 mOhm typ., -9 A, STripFET H6 Power MOSFET in a SO-8 package

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STS9P3LLH6 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STS9P3LLH6
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STS9P3LLH6
MOSFET P-CH 30V 9A 8SO

MOSFET P-CH 30V 9A 8SO

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number STS9P3LLH6-ND 1262058-STS9P3LLH6 STS9P3LLH6 STS9P3LLH6
Product Name Single FETs, MOSFETs FETs - Single - STS9P3LLH6 MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel; P-Channel
Package Type "8-SOIC (0.154"", 3.90mm Width)" SOT3 Surface Mount
V(BR)DSS 30 volts
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