STMicroelectronics, Inc. P-Channel -30 V 12 mOhm -9 A MOSFET Transistor STS9P3LLH6

P-channel -30 V, 12 mOhm typ., -9 A, STripFET H6 Power MOSFET in a SO-8 package Product overview: STS9P3LLH6 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, -30 V, 12 mOhm, -9 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -30 V, 12 mOhm, -9 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STS9P3LLH6 can be used for catalog matching and distributor lookup.

P-Channel 30V 9A (Ta) 2.7W (Ta) Surface Mount 8-SO

Manufacturer: STMicroelectronics
Win Source Part Number: 1262058-STS9P3LLH6
Packaging: Tape and Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: P-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.st.com
Manufacturer Package: 8-SOIC
Power Dissipation (Maximum): 2.7W
Alternative Parts (Cross-Reference): SI4435DY-NL; IRF9333TRPbF; IRF9333PbF;
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 2,500
MSL Level: 3 (168 Hours)
Vds - Drain-Source Breakdown Voltage: 30V
Id - Continuous Drain Current: 9A
Rds On (Maximum) at Id, Vgs: 15mOhm at 4.5A, 10V
Gate Source Voltage(th) (Maximum) at Id: 2V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 24nC at 4.5V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 2615pF at 25V