Manufacturer: STMicroelectronics
Win Source Part Number: 031547-STS8DN3LLH5
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: STS8DN3LLH5
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 2.7W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 10A
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 5.4nC @ 4.5V
Max Input Capacitance: 724pF @ 25V
Maximum Rds On at Id,Vgs: 19 mOhm @ 5A, 10V
Alternative Parts (Cross-Reference): HAT2218R-EL-E; IRF7907PbF-1; AO4854L; SP8K64TB;
Introduction Date: January 12, 2010
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2029
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Balance
MOSFET 2N-CH 30V 10A 8SO
Mosfet Array 2 N-Channel (Dual) 30V 10A 2.7W Surface Mount 8-SOIC
Mosfet Array 2 N-Channel (Dual) 30V 10A 2.7W Surface Mount 8-SOIC
Mosfet Array 2 N-Channel (Dual) 30V 10A 2.7W Surface Mount 8-SOIC
N-CH Power MOSFET 30V 10A 8-Pin SO N Product overview: STS8DN3LLH5 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 10A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 10A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-STS8DN3LLH5 can be used for catalog matching and distributor lookup.
MOSFET 2N-CH 30V 10A 8SOIC
MOSFET, DUAL N-CH, 30V, 10A, 2.7W ROHS COMPLIANT: YES
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 031547-STS8DN3LLH5 | STS8DN3LLH5 | 497-10391-2-ND | 289-STS8DN3LLH5 | STS8DN3LLH5 | 69AH2857 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STS8DN3LLH5 | FET, MOSFET Arrays | FET, MOSFET Arrays | 30V 10A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, Dual N-Ch, 30V, 10A, 2.7W Rohs Compliant Stmicroelectronics |
| Polarity | N-Channel | N-Channel; 2 N-Channel (Dual) | ||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | |||
| PD | 2700 milliwatts | 2700 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | |||
| Package Type | SOT3; 8-SO | 8-SOIC (0.154", 3.90mm Width) | "8-SOIC (0.154"", 3.90mm Width)" | TO-3 |
