STMicroelectronics, Inc. FET, MOSFET Arrays STS8C5H30L

Description
MOSFET N/P-CH 30V 8A/5.4A 8SOIC
Request a Quote Datasheet
Description
MOSFET N/P-CH 30V 8A/5.4A 8SOIC
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - STS8C5H30L - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
STS8C5H30L
FET, MOSFET Arrays STS8C5H30L
MOSFET N/P-CH 30V 8A/5.4A 8SOIC

MOSFET N/P-CH 30V 8A/5.4A 8SOIC

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STS8C5H30L - 031546-STS8C5H30L - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STS8C5H30L
031546-STS8C5H30L
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STS8C5H30L 031546-STS8C5H30L
Manufacturer: STMicroelectronics Win Source Part Number: 031546-STS8C5H30L Packaging: Reel - TR Mounting: SMD (SMT) FET Type: N and P-Channel FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 2W Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 8A, 5.4A Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 10nC @ 5V Max Input Capacitance: 857pF @ 25V Maximum Rds On at Id,Vgs: 22 mOhm @ 4A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 031546-STS8C5H30L
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 2W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 8A, 5.4A
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 10nC @ 5V
Max Input Capacitance: 857pF @ 25V
Maximum Rds On at Id,Vgs: 22 mOhm @ 4A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET N/P-Ch 30V 8/5 Amp

MOSFET N/P-Ch 30V 8/5 Amp

Buy Now Datasheet
Mosfet, Complementary, 30V, 8A, 1.6W; Transistor Polarity Stmicroelectronics - 94T3503 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Complementary, 30V, 8A, 1.6W; Transistor Polarity Stmicroelectronics
94T3503
Mosfet, Complementary, 30V, 8A, 1.6W; Transistor Polarity Stmicroelectronics 94T3503
MOSFET, COMPLEMENTARY, 30V, 8A, 1.6W; Transistor Polarity:Complementa ry N and P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:8A; On Resistance Rds(on):0.018ohm; Transistor Mounting:Surface Mount; Product Range:-RoHS Compliant: Yes

MOSFET, COMPLEMENTARY, 30V, 8A, 1.6W; Transistor Polarity:Complementary N and P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:8A; On Resistance Rds(on):0.018ohm; Transistor Mounting:Surface Mount; Product Range:-RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STS8C5H30L - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STS8C5H30L
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STS8C5H30L
MOSFET N/P-CH 30V 8A/5.4A 8SOIC

MOSFET N/P-CH 30V 8A/5.4A 8SOIC

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number STS8C5H30L 031546-STS8C5H30L STS8C5H30L 94T3503 STS8C5H30L
Product Name FET, MOSFET Arrays TRANSISTORS - Transistors - FETs, MOSFETs - RF - STS8C5H30L MOSFET Mosfet, Complementary, 30V, 8A, 1.6W; Transistor Polarity Stmicroelectronics Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; N and P-Channel P-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 30 volts 30 volts
IDSS 8000 milliamps 8000 milliamps
TJ 150 C (302 F) 150 C (302 F)
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