P-channel 40 V, 0.0175 Ohm typ., 7 A STripFET F6 Power MOSFET in a SO-8 package Product overview: STS7P4LLF6 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 40 V, 0.0175 Ohm, 7 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40 V, 0.0175 Ohm, 7 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STS7P4LLF6 can be used for catalog matching and distributor lookup.
MOSFET P-CH 40V 7A POWER8-SO
P-Channel 40V 7A (Tj) 2.7W (Ta) Surface Mount 8-SO
P-Channel 40V 7A (Tj) 2.7W (Ta) Surface Mount 8-SO
P-Channel 40V 7A (Tj) 2.7W (Ta) Surface Mount 8-SO
Manufacturer: STMicroelectronics
Win Source Part Number: 1262052-STS7P4LLF6
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: P-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Temperature Range - Operating: 150°C
Manufacturer Homepage: www.st.com
Manufacturer Package: 8-SOIC
Power Dissipation (Maximum): 2.7W
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 1
MSL Level: 3 (168 Hours)
Vds - Drain-Source Breakdown Voltage: 40V
Rds On (Maximum) at Id, Vgs: 20.5mOhm at 3.5A, 10V
Gate Source Voltage(th) (Maximum) at Id: 1V at 250μA (Minimum)
Gate Charge (Qg) (Maximum) at Vgs: 22nC at 4.5V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 2850pF at 25V
MOSFET P-channel 40 V, 0.0175 Ohm typ., 7 A STripFET F6 Power MOSFET in a SO-8 package
MOSFET P-CH 40V 7A POWER8-SO
MOSFET, P-CH, -40V, -7A, 150DEG C, 2.7W; Transistor Polarity:P Channel; Continuous Drain Current Id:-7A; Drain Source Voltage Vds:-40V; On Resistance Rds(on):0.0175ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1V; Power RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-STS7P4LLF6 | STS7P4LLF6 | 497-16045-6-ND | 1262052-STS7P4LLF6 | STS7P4LLF6 | STS7P4LLF6 | 26AH0266 |
| Product Name | P-Channel 40 V 0.0175 Ohm 7 A MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | Electronic Wholesale - STS7P4LLF6 | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, P-Ch, -40V, -7A, 150Deg C, 2.7W; Transistor Polarity Stmicroelectronics |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel; P-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 40 volts | 40 volts | |||||
| IDSS | 7000 milliamps | -7000 milliamps | |||||
| PD | 2700 milliwatts | 2700 milliwatts |
